M. Salvi

Bio: M. Salvi is an academic researcher from CNET. The author has contributed to research in topics: Photoluminescence & Ion implantation. The author has an hindex of 11, co-authored 23 publications receiving 819 citations.

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Abstract: Luminescence of erbium implanted in various semiconductors such as Si, InP, GaAs, AlGaAs, GaInAsP, ZnTe and CdS is presented. The Er/sup 3+/ emission wavelength is the same for all these semiconductors with a bandgap energy greater than the intrashell transition energy of Er 4f electrons (0.805 eV). The Er/sup 3+/ emission intensity depends strongly on both the bandgap energy of the host semiconductor and the material temperature. To obtain an intense room temperature emission, a wide-gap semiconductor must be used.

Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities

Abstract: Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 1018 cm-3 of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 µm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.

Anomalous behavior of ion-implanted GaSb

Abstract: Anomalous elevations up to 6 μm of the ion‐implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen was measured in the porous layers but this oxygen is likely not responsible for the swelling. The behavior of implanted GaSb is very similar to that of InSb previously described.

Schottky and field‐effect transistor fabrication on InP and GaInAs

Abstract: Schottky contacts with barrier heights of 0.76 eV on n‐type InP and 0.65 eV on n‐type GaInAs are realized by a new surface treatment. These contacts are used as a gate for the fabrication of field‐effect transistors (FET) on these materials. Extrinsic transconductances of 100 and 7.5 mS/mm are measured on GaInAs and InP FET’s, respectively. These values are obtained without optimization of the ohmic contacts of the devices and without a gate recess.

N-channel MISFETs on semi-insulating InP for logic applications

Abstract: N-channel enhancement and depletion mode MISFETs have been fabricated on the same Fe-doped semi-insulating wafer. Their electrical characteristics are reported, along with some comparison with MISFETs processed on a silicon substrate with the same mark set.

Gan : processing, defects, and devices

Abstract: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Erbium implanted thin film photonic materials

Abstract: Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3, Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.

Guiding, modulating, and emitting light on Silicon-challenges and opportunities

Abstract: Silicon photonics could enable a chip-scale platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. This paper discusses mechanisms in silicon photonics for waveguiding, modulating, light amplification, and emission. These mechanisms, together with recent advances of fabrication techniques, have enabled the demonstration of ultracompact passive and active silicon photonic components with very low loss.

The physics and technology of gallium antimonide: An emerging optoelectronic material

Abstract: Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics