M. Sannino

Bio: M. Sannino is an academic researcher. The author has contributed to research in topics: Microwave & Noise figure. The author has an hindex of 1, co-authored 2 publications receiving 3 citations.

Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers

Abstract: The present paper focuses on the small-signal and noise characterization of microwave transistors and circuits at temperatures ranging from 290 to 90 K, in the 6-18 GHz frequency band. We here report on the measurement procedure adopted and the relevant experimental results, including also detailed linear circuit modeling to determine the temperature dependence of basic physical parameters of the tested pseudomorphic HEMT's. We have already worked at moderately low temperatures (down to 220 K) on either packaged and on wafer microwave transistors and present results at lower temperatures confirm what has been previously found.

On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system

Abstract: On wafer thermal analysis is of basic importance to assess key aspects of the performance and the reliability of microwave devices and circuits in a critical operation environment. To this aim, we have designed and realized an efficient Peltier-stage thermal chuck for on wafer microwave probe stations working over the 220 K – 320 K temperature range. Extensive testing has enlightened its features in terms of fast settling time and accurate temperature control. The performance of the system has been exploited in measurement of I-V curves, scattering parameters and noise figure up to 40 GHz of several microwave devices. We here describe the details of the measurement system and present the results of our most recent experimental activity.

Characterization and Modeling of High-Frequency Active Devices Oriented to High-Sensitivity Subsystems Design

Abstract: In this chapter, quite a broad overview of noise characterization-related topics is offered to the reader, with different depth levels. Most of the attention, however, is paid to the practical side of noise measurements and the subsequent steps of noise extraction and modeling, as well as to some advanced design methodologies. A major concern is in the procedures that are necessary to effectively de-embed the measurements from the contribution of the test bench and the adopted methodologies. The scope of the discussion cover a well-assessed theory concerning linear devices operated in the frequency range from a few megahertz to some 100 GHz, and at physical temperatures above some tens of kelvins. In these conditions, 1/f noise can be neglected and Johnson (thermal) noise is approximately independent of frequency; as a consequence, thermal and, possibly, shot noise of elemental noise sources add up to yield a white power spectrum, which can be conveniently described in terms of “equivalent” thermal noise. The second part of the chapter is devoted to the application of the device noise models in the proper design of single- and multistage low noise amplifiers, including a mixed technique that actually employs characterization techniques directly in the amplifier design.

Modeling the temperature noisy performance of low-noise III-V microwave devices down to cryogenic levels

Abstract: We performed research work on the effects of temperature by investigating the, DC behavior, the small signal and the noise performance of HEMT and HBT at microwave frequencies by means of different experimental systems down to cryogenic levels. The measurement data were then employed to extract temperature-dependent noisy models to be implemented in commercial CAD software. Here we report the results of the modeling procedure with a special concern for the noise performance whose knowledge is of primary importance in the design of ultra high sensitivity receivers.

LNA performance optimisation using post-production noise characterisation

Abstract: An alternative LNA design flow that addresses some of the typical issues connected with MMIC realisation is given in this contribution. The role of the input matching network is highlighted and investigated for low noise applications. Following the proposed design flow, an LNA test vehicle has been realised. The LNA's noise figure is less than 0.55dB while its associated gain is better than 35dB on the whole C-Band (4–8GHz).