M
M. Sidorow
Researcher at Advanced Micro Devices
Publications - 1
Citations - 53
M. Sidorow is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Electron mobility & Leakage (electronics). The author has an hindex of 1, co-authored 1 publications receiving 53 citations.
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Proceedings ArticleDOI
Nickel silicide metal gate FDSOI devices with improved gate oxide leakage
Zoran Krivokapic,Witek Maszara,K. Achutan,P. King,J. Gray,M. Sidorow,E. Zhao,J. Zhang,J. Chan,A. Marathe,Ming-Ren Lin +10 more
TL;DR: In this article, the authors demonstrate metal gate FDSOI devices using NiSi gates with symmetric V/sub t/ for both NMOS and PMOS devices and show capacitance equivalent gate oxide thickness (CET) 06 nm thinner than poly gates.