M
M. V. Yakushev
Researcher at Russian Academy of Sciences
Publications - 133
Citations - 640
M. V. Yakushev is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Epitaxy. The author has an hindex of 12, co-authored 125 publications receiving 529 citations. Previous affiliations of M. V. Yakushev include Tomsk State University & Ural Federal University.
Papers
More filters
Proceedings ArticleDOI
HgCdTe epilayers on GaAs: growth and devices
V. S. Varavin,V. V. Vasiliev,Sergey A. Dvoretsky,Nikolay N. Mikhailov,Victor N. Ovsyuk,Yuri G. Sidorov,A. O. Suslyakov,M. V. Yakushev,A. L. Aseev +8 more
TL;DR: In this article, a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for reproducibility of MCT Hs's growth on substrates up to 4" in diameter.
Journal ArticleDOI
HgCdTe Heterostructures on Si (310) Substrates for Midinfrared Focal Plane Arrays
M. V. Yakushev,D. V. Brunev,V. S. Varavin,V. V. Vasilyev,S. A. Dvoretskii,I. V. Marchishin,A. V. Predein,I. V. Sabinina,Yu. G. Sidorov,A. V. Sorochkin +9 more
TL;DR: In this paper, the results of measurements and discussion of photoelectric parameters of an infrared photodetector of a format of 320 × 256 elements with a step of 30 μm based on a hybrid assembly of a matrix photosensitive cell with a Si multiplexer are presented.
Journal ArticleDOI
Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates
V. V. Rumyantsev,D. V. Kozlov,S. V. Morozov,Mikhail A. Fadeev,A. M. Kadykov,Frederic Teppe,V. S. Varavin,M. V. Yakushev,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,Vladimir I. Gavrilenko +11 more
TL;DR: In this paper, the energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, was studied via numerical calculations and low temperature photoconductivity measurements of 'vacancy-doped' Hg CdTe films with low cadmium content, and the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands.
Journal ArticleDOI
Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
I. I. Izhnin,A.V. Voitsekhovsky,A. G. Korotaev,O. I. Fitsych,A. Yu. Bonchyk,H. V. Savytskyy,K. D. Mynbaev,K. D. Mynbaev,V. S. Varavin,Sergey A. Dvoretsky,Sergey A. Dvoretsky,Nikolay N. Mikhailov,M. V. Yakushev,Rafal Jakiela +13 more
TL;DR: A defect study was performed on arsenic-implanted Hg 1-x Cd x Te (x ǫ = 0.23-0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabrication of p + -n-type photodiodes.
Journal ArticleDOI
High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(0 1 3)
V. M. Bazovkin,Sergey A. Dvoretsky,A. A. Guzev,A. P. Kovchavtsev,D. V. Marin,V. G. Polovinkin,I. V. Sabinina,G. Yu. Sidorov,A. V. Tsarenko,V. V. Vasil’ev,V. S. Varavin,M. V. Yakushev +11 more
TL;DR: In this paper, the characteristics of SWIR (1.6-3-μm) 320-256 and 1024-×-1024 focal plane arrays (FPA) based on n-type In-doped HgCdTe heteroepitaxial layers are reported.