M
M. Vinet
Researcher at IBM
Publications - 149
Citations - 2238
M. Vinet is an academic researcher from IBM. The author has contributed to research in topics: MOSFET & CMOS. The author has an hindex of 25, co-authored 149 publications receiving 1913 citations.
Papers
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Journal ArticleDOI
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon.
A. Crippa,R. Ezzouch,A. Apra,A. Amisse,R. Lavieville,Louis Hutin,Benoit Bertrand,M. Vinet,Matias Urdampilleta,Tristan Meunier,Marc Sanquer,Xavier Jehl,Romain Maurand,S. De Franceschi +13 more
TL;DR: In this paper, a gate-coupled rf reflectometry was used for the dispersive readout of a fully functional spin qubit device using industry-standard silicon technology.
Journal ArticleDOI
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET
Benoit Voisin,Romain Maurand,Sylvain Barraud,M. Vinet,Xavier Jehl,Marc Sanquer,Julien Renard,S. De Franceschi +7 more
TL;DR: It is shown that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot and reveals a g-factor with unexpectedly strong anisotropy and gate dependence.
Proceedings ArticleDOI
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Qing Liu,M. Vinet,J. Gimbert,Nicolas Loubet,Romain Wacquez,L. Grenouillet,Y. Le Tiec,Ali Khakifirooz,Toshiharu Nagumo,Kangguo Cheng,H. Kothari,Chanemougame Daniel,F. Chafik,S. Guillaumet,J. Kuss,Frederic Allibert,Gen Tsutsui,James Chingwei Li,Pierre Morin,Swati Mehta,R. Johnson,Lisa F. Edge,Shom Ponoth,T. Levin,S. Kanakasabapathy,Balasubramanian S. Pranatharthi Haran,Huiming Bu,J. L. Bataillon,Olivier Weber,O. Faynot,Emmanuel Josse,Michel Haond,Walter Kleemeier,Mukesh Khare,T. Skotnicki,Scott Luning,Bruce B. Doris,M. Celik,R. Sampson +38 more
TL;DR: Electrostatics are obtained, demonstrating the scalability of these devices to14nm and beyond, and BTI was improved >20% vs a comparable bulk device and evidence of continued scalability beyond 14nm is provided.
Proceedings ArticleDOI
14nm FDSOI technology for high speed and energy efficient applications
Olivier Weber,Emmanuel Josse,Francois Andrieu,Antoine Cros,Evelyne Richard,P. Perreau,E. Baylac,N. Degors,C. Gallon,Eric Perrin,S. Chhun,E. Petitprez,S. Delmedico,Jerome Simon,G. Druais,S. Lasserre,J. Mazurier,N. Guillot,E. Bernard,R. Bianchini,L. Parmigiani,X. Gerard,Clement Pribat,Olivier Gourhant,F. Abbate,C. Gaumer,V. Beugin,Pascal Gouraud,P. Maury,S. Lagrasta,D. Barge,Nicolas Loubet,Remi Beneyton,Daniel Benoit,S. Zoll,J.-D. Chapon,L. Babaud,M. Bidaud,Magali Gregoire,C. Monget,B. Le-Gratiet,P. Brun,M. Mellier,A. Pofelski,L. Clément,R. Bingert,S. Puget,J.-F. Kruck,D. Hoguet,Patrick Scheer,Thierry Poiroux,J.-P. Manceau,Mustapha Rafik,Denis Rideau,Marie-Anne Jaud,J. Lacord,Frederic Monsieur,L. Grenouillet,M. Vinet,Quanwei Liu,Bruce B. Doris,M. Celik,S.P. Fetterolf,O. Faynot,Michel Haond +64 more
TL;DR: A 14nm technology designed for high speed and energy efficient applications using strain-engineered FDSOI transistors using forward back bias is presented and it is experimentally demonstrated that the power efficiency of this technology provides an additional 40% dynamic power reduction for ring oscillators working at the same speed.
Journal ArticleDOI
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
TL;DR: In this paper, a simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires, which is a metaloxide-semiconductor field effect transistor made on silicon-on-insulator thin films.