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M. Voos

Bio: M. Voos is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Superlattice & Cyclotron resonance. The author has an hindex of 5, co-authored 5 publications receiving 343 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, a quasi zero-energy-gap semiconductor superlattice was investigated and the offset between the HgTe and CdTe valence bands was determined in terms of interband transitions from valence to conduction subbands.
Abstract: Far-infrared magnetoabsorption experiments done in a HgTe-CdTe superlattice are presented. From the results, which are interpreted in terms of interband transitions from valence to conduction subbands, the superlattice band structure has been deduced. These investigations show, in particular, that this superlattice is a quasi zero-energy-gap semiconductor, and yield the first determination of the offset between the HgTe and CdTe valence bands.

140 citations

Journal ArticleDOI
TL;DR: In this article, the symmetry properties of the Bloch envelope functions in a superlattice have been shown to influence the absorption and emission line shapes associated with interband transitions.
Abstract: We show that the symmetry properties of the Bloch envelope functions in a superlattice influence considerably the absorption and emission line shapes associated with interband transitions. Absolute values of the absorption coefficients in superlattices are also discussed.

74 citations

Journal ArticleDOI
TL;DR: In this paper, high-field, far-infrared magneto-absorption experiments were performed in semimetallic InAs-GaSb superlattices and the spectra exhibited extensive oscillations of cyclotron resonance and interband absorption from valence to conduction subbands.

66 citations

Journal ArticleDOI
TL;DR: Luminescence experiments performed in InAsGaSb superlattices as a function of temperature were performed in this paper, showing that the luminescence spectra exhibit a low-energy tail below 300 K, which leads to simple theoretical models to account for impurities and interface defects.

43 citations

Journal ArticleDOI
TL;DR: In this article, the authors present near band gap optical transmission experiments in a series of GaSb-AlSb superlattices grown by molecular beam epitaxy, and the spectra exhibit a steplike behavior characteristic of two-dimensional electron systems.
Abstract: We present near band gap optical transmission experiments in a series of GaSb–AlSb superlattices grown by molecular beam epitaxy. The spectra exhibit a steplike behavior characteristic of two‐dimensional electron systems. The absorption steps are attributed to transitions between valence and conduction states confined in the GaSb quantum wells. However, the energy of the absorption edge is smaller than that expected for a simple well, probably as a result of the effect of strain.

20 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the electronic energy levels of semiconductor heterostructures within the envelope function scheme were described and the Coulombic bound states in heterostructure (impurities, excitons) were discussed, and the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Abstract: This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.

397 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present a survey of new theoretical models of semiconductor heterojunctions and illustrate their newfound ability to derive from first principles rules of heterojunction behavior.

390 citations

Journal ArticleDOI
Leo Esaki1
TL;DR: In this paper, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.
Abstract: Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.

335 citations

Journal ArticleDOI
W. A. Harrison1, J. Tersoff1
TL;DR: In this article, a tight-binding theory of semiconductor heterojunction band lineups is presented, where interface dipoles play a crucial role in determining lineups, so that lineups obtained by using the vacuum level as a reference (e.g., the electron affinity rule) are not reliable.
Abstract: A tight-binding theory of semiconductor heterojunction band lineups is presented. Interface dipoles are shown to play a crucial role in determining lineups, so that lineups obtained by using the vacuum level as a reference (e.g., the electron affinity rule) are not reliable. Instead, the self-consistent lineup can be obtained approximately by aligning the average sp 3 hybrid energies in the respective semiconductors. Numerical results are provided and compared with experiment, and the approximations and accuracy in this approach are discussed. The application of these ideas to Schottky barriers is also considered.

201 citations

Journal ArticleDOI
TL;DR: Intense luminescence from staggered band line-up GaSb-GaAs heterostructures up to room temperature is demonstrated and a bimolecular recombination mechanism is revealed in PL and in time-resolved PL studies.
Abstract: We have studied optical properties of staggered band line-up (type-II) heterostructures based on strained GaSb sheets in a GaAs matrix. The giant valence-band offset characteristic to this heterojunction leads to an effective localization of holes in ultrathin GaSb layers. An intense photoluminescence (PL) line caused by radiative recombination of localized holes with electrons located in the nearby GaAs regions is observed. The separation of nonequilibrium electrons and holes in real space results in a dipole layer and, thus, in the formation of quantum wells for electrons in the vicinity of the GaSb layer. The luminescence maximum shifts towards higher photon energies with rising excitation density reflecting the increase in the electron quantization energy. A bimolecular recombination mechanism is revealed in PL and in time-resolved PL studies. In the case of pseudomorphic monolayer-thick GaSb layers, the radiative exciton ground state does not exist. Accordingly, small absorption coefficients and a featureless behavior of the band-to-band calorimetric absoprtion spectrum are found in the vicinity of ${\mathit{k}}_{\mathit{x},}$y=0. Remarkable enhancement of the absorption coefficient with a characteristic onset is observed for heavy holes with ${\mathit{k}}_{\mathit{x},}$yg0. Radiative states in the continuum of heavy-hole subbands are revealed also in temperature-dependent PL studies. The experimentally measured onset energies point out the importance of GaSb heavy- and light-hole mixing effects. We demonstrate intense luminescence from staggered band line-up GaSb-GaAs heterostructures up to room temperature.

197 citations