M. Wiesenmayer

Bio: M. Wiesenmayer is an academic researcher from University of Kiel. The author has contributed to research in topics: Femtosecond & Inverse photoemission spectroscopy. The author has an hindex of 9, co-authored 14 publications receiving 818 citations. Previous affiliations of M. Wiesenmayer include Kaiserslautern University of Technology.

Collapse of long-range charge order tracked by time-resolved photoemission at high momenta

Abstract: Angle-resolved photoelectron spectroscopy (ARPES) is widely used to study the electronic structure of crystalline solids such as high-temperature superconductors, topological insulators and graphene-based materials. Time-resolved ARPES has opened the door to the study of the response of such electronic features on ultrafast timescales. Now Rohwer et al. add a new dimension. Using high photon energies, they are able to study ultrafast dynamics at high momenta, at which some of the most interesting fundamental phenomena occur. Applying the technique to the charge density wave material 1T-TiSe2, they obtain stroboscopic images of the electronic band structure at high momentum and show that atomic-scale periodic long-scale order collapses on a surprisingly short timescale of 20 femtoseconds. This work reveals rapid response times in photoinduced properties that could stimulate research into new types of ultrafast switching device. Angle-resolved photoemission spectroscopy (ARPES) is widely used to study the electronic structure of a wide range of correlated materials. Time-resolved ARPES allows the study of the response of such electronic features on ultrafast timescales; this paper now adds an exciting new dimension by using high photon energies that allow the study of ultrafast dynamics at high momenta, where often the most interesting fundamental phenomena occur. The technique is applied to the charge density wave material 1T-TiSe2 and it is shown with stroboscopic imaging of the electronic band structure at high momentum that atomic-scale periodic long-range order collapses on a surprisingly short timescale of 20 femtoseconds. Intense femtosecond (10−15 s) light pulses can be used to transform electronic, magnetic and structural order in condensed-matter systems on timescales of electronic and atomic motion1,2,3. This technique is particularly useful in the study4,5 and in the control6 of materials whose physical properties are governed by the interactions between multiple degrees of freedom. Time- and angle-resolved photoemission spectroscopy is in this context a direct and comprehensive, energy- and momentum-selective probe of the ultrafast processes that couple to the electronic degrees of freedom7,8,9,10. Previously, the capability of such studies to access electron momentum space away from zero momentum was, however, restricted owing to limitations of the available probing photon energy10,11. Here, using femtosecond extreme-ultraviolet pulses delivered by a high-harmonic-generation source, we use time- and angle-resolved photoemission spectroscopy to measure the photoinduced vaporization of a charge-ordered state in the potential excitonic insulator 1T-TiSe2 (refs 12, 13). By way of stroboscopic imaging of electronic band dispersions at large momentum, in the vicinity of the edge of the first Brillouin zone, we reveal that the collapse of atomic-scale periodic long-range order happens on a timescale as short as 20 femtoseconds. The surprisingly fast response of the system is assigned to screening by the transient generation of free charge carriers. Similar screening scenarios are likely to be relevant in other photoinduced solid-state transitions and may generally determine the response times. Moreover, as electron states with large momenta govern fundamental electronic properties in condensed matter systems14, we anticipate that the experimental advance represented by the present study will be useful to study the ultrafast dynamics and microscopic mechanisms of electronic phenomena in a wide range of materials.

Spin-dependent trapping of electrons at spinterfaces

Abstract: Understanding the origin of spin filtering in metal/organic interfaces is important for the control of spin injection in organic semiconductors. A time-resolved photoemission experiment shows that spin filtering can be explained by the trapping of electrons in spin-dependent potentials at the interface.

Quantum-well-induced giant spin-orbit splitting.

Abstract: We report on the observation of a giant spin-orbit splitting of quantum-well states in the unoccupied electronic structure of a Bi monolayer on Cu(111). Up to now, Rashba-type splittings of this size have been reported exclusively for surface states in a partial band gap. With these quantum-well states we have experimentally identified a second class of states that show a huge spin-orbit splitting. First-principles electronic structure calculations show that the origin of the spin-orbit splitting is due to the perpendicular potential at the surface and interface of the ultrathin Bi film. This finding allows for the direct possibility to tailor spin-orbit splitting by means of thin-film nanofabrication.

Self-amplified photo-induced gap quenching in a correlated electron material

Abstract: Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains-on a microscopic level-the extremely fast response of this material to ultrafast optical excitation.

Giant Rashba-type spin splitting in bulk BiTeI

Abstract: A very large Rashba-type spin splitting, which is a consequence of spin–orbit interaction, has been observed in the heavy-element semiconductor BiTeI. The results show the possibility, in principle, of using the material in spintronics devices in which the electron spin is controlled by electric currents.

Snapshots of non-equilibrium Dirac carrier distributions in graphene

Abstract: The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all of these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy- and momentum-dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme-ultraviolet pulses to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. Whereas excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find any indication of carrier multiplication, questioning the applicability of graphene for light harvesting.

Snapshots of non-equilibrium Dirac carrier distributions in graphene

Abstract: The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

Abstract: Using femtosecond time- and angle-resolved photoemission spectroscopy, we investigated the nonequilibrium dynamics of the topological insulator Bi2Se3. We studied p-type Bi2Se3, in which the metallic Dirac surface state and bulk conduction bands are unoccupied. Optical excitation leads to a metastable population at the bulk conduction band edge, which feeds a nonequilibrium population of the surface state persisting for >10 ps. This unusually long-lived population of a metallic Dirac surface state with spin texture may present a channel in which to drive transient spin-polarized currents.