Author
M. Yamada
Bio: M. Yamada is an academic researcher from University of Tsukuba. The author has an hindex of 1, co-authored 2 publications receiving 6 citations.
Papers
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01 Oct 2008TL;DR: In this paper, the strip isolation and punch-through properties of microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment.
Abstract: Microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment. We evaluated the radiation hardness of the sensors fabricated by Hamamatsu Photonics through irradiation with 70-MeV protons up to the fluence of 5 × 1015 1-MeV n eq /cm2 and with 60Co γs at a rate foreseen at the Super LHC. The strip isolation and punch-through properties are characterized in detail. Various strip isolation structures, p-stop, p-spray and both combined, are examined. The results are compared among commercially available MCZ and two types of FZ wafers.
6 citations
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01 Oct 2009
TL;DR: In this article, the measurement of interstrip parameters of p-type silicon strip sensors which are developed in a large collaboration to be used in a future tracker for the LHC upgrade is reported.
Abstract: We report on the measurement of interstrip parameters of p-type silicon strip sensors which we are developing in a large collaboration to be used in a future tracker for the LHC upgrade. We measure on test structures with about 1 cm long strips the interstrip resistance, interstrip capacitance (at 1 MHz) and punch-through protection both pre-rad and after irradiation with 70 MeV protons to a fluence of 1.5×10^13 p/cm^2, corresponding to about 1 MRad, from prototyping runs with Hamamatsu Photonics and Micron Semiconductors. We report the values for a variety of isolation scenarios of p-stops, p-spray and a combination of both.
Cited by
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TL;DR: In this paper, the ATLAS experiment is described as installed in i ts experimental cavern at point 1 at CERN and a brief overview of the expec ted performance of the detector is given.
Abstract: This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.
2,798 citations
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University of Tsukuba1, University of Liverpool2, University of Glasgow3, University of California, Santa Cruz4, Academy of Sciences of the Czech Republic5, University of Cambridge6, Brookhaven National Laboratory7, Lancaster University8, University of Ljubljana9, University of Geneva10, Stony Brook University11, Charles University in Prague12, University of Sheffield13, Spanish National Research Council14, University of New Mexico15, KEK16, University of Freiburg17
21 Apr 2011-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.
Abstract: We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
38 citations
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TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Abstract: Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
13 citations
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TL;DR: The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002 as discussed by the authors, and the target fluence for the innermost tracking layers of the future upgrade of the CERN large Hadron collider (LHC) is 1016 1 MeV neutron equivalent (nq cm−2.
Abstract: The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the
development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence
to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large
hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm−2. This is much larger than typical fluences in space,
but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space
environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor
to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping
concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface
treatment), novel detector designs (3D, edge-less, interconnects).
2 citations
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KEK1
01 Nov 2010-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V.
Abstract: We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V. In comparison of wafer materials, little advantage was observed in the 6 in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.
2 citations