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M

M. Zwierzycki

Researcher at Polish Academy of Sciences

Publications -  15
Citations -  790

M. Zwierzycki is an academic researcher from Polish Academy of Sciences. The author has contributed to research in topics: Graphene & Kondo effect. The author has an hindex of 9, co-authored 15 publications receiving 677 citations. Previous affiliations of M. Zwierzycki include University of Twente.

Papers
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Multiplet ligand-field theory using Wannier orbitals

TL;DR: In this article, the authors demonstrate how ab initio cluster calculations including the full Coulomb vertex can be done in the basis of localized Wannier orbitals which describe the low-energy density functional (local-density approximation) band structure of an infinite crystal, e.g., the transition-metal $3d$ and oxygen $2p$ orbitals.
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Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene

TL;DR: In this paper, the spin filtering properties of spin-injection interfaces between transition metals and semiconductors have been investigated and it was shown that spin filtering is quite insensitive to amounts of interface roughness and disorder.
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Conductance calculations for quantum wires and interfaces: Mode matching and Green's functions

TL;DR: In this paper, the authors derived a more compact expression for the transmission matrix elements, and showed how all the Green's function results can be derived from the mode-matching technique.
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Calculating scattering matrices by wave function matching

TL;DR: Wave function matching (WFM) as mentioned in this paper is a transparent technique for calculating transmission and reflection matrices for any Hamiltonian that can be represented in tight-binding form, such as a localized orbital basis or on a real space grid.
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Dynamic ferromagnetic proximity effect in photoexcited semiconductors.

TL;DR: The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.