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Showing papers by "Mahesh Kumar published in 2022"


Journal ArticleDOI
TL;DR: In this paper , a review of the progress in synthesis protocols, structure engineering and hybridization design of conducting polymers is presented to highlight the unique sensing functions, strategies and perspectives of CPs for future gas sensors.

42 citations


Journal ArticleDOI
TL;DR: In this article, the most recent advances of formaldehyde sensors utilizing metal oxide semiconductors (MOS nanostructures) are summarized and the optimization strategies to enhance the formaldehyde sensor performances are discussed.

42 citations



Journal ArticleDOI
Morteza Aghaee, Arun Goud Akkala, Zulfiqar Alam, Rizwan Ali, Alejandro Ramirez, Mariusz Andrzejczuk, Andrey E. Antipov, Pavel Aseev, Mikhail A. Astafev, Bela Bauer, J. Becker, Srinivasa Rao Boddapati, Frenk Boekhout, Jouri D. S. Bommer, E. B. Hansen, Tom Bosma, L. Bourdet, Samuel Boutin, Philippe Caroff, Lucas Casparis, Maja C. Cassidy, Anna Wulff Christensen, Noah Clay, William S. Cole, Fabiano Corsetti, Ajuan Cui, Paschalis Dalampiras, Anand Dokania, G. de Lange, Michiel W. A. de Moor, J. C. Estrada Saldaña, Saeed Fallahi, Zahra Heidarnia Fathabad, John King Gamble, Geoffrey C. Gardner, Deshanie Govender, Flavio Griggio, Ruben Grigoryan, Sergei Gronin, Jan Gukelberger, Sebastian Heedt, Jesús Herranz Zamorano, Samantha Ho, U. Laurens D. Holgaard, William H. P. Nielsen, Henrik Ingerslev, Peter Krogstrup, Linda I. M. Johansson, Jeffrey Jones, Ray Kallaher, Farhad Karimi, Torsten Karzig, Cameron N. King, Maren E. Kloster, Christina Knapp, D. Kocon, Jonne V. Koski, Pasi Kostamo, Mahesh Kumar, Tom Laeven, T. W. Larsen, Kongyi Li, Tyler Lindemann, Julie Helen Love, Roman M. Lutchyn, Michael J. Manfra, Elvedin Memisevic, Chetan Nayak, Bas Nijholt, Morten Hannibal Madsen, Signe B. Markussen, E. A. Martínez, Robert McNeil, Andrew Mullally, Jens H. Nielsen, Anne Nurmohamed, Eoin O'Farrell, Keita Otani, S. J. Pauka, Karl Petersson, L. Petit, Dima Pikulin, Frank Santa Cruz Preiss, Marina Quintero Perez, Katrine Skovgaard Rasmussen, Mohana K. Rajpalke, Davydas Razmadze, Outi Reentila, David J. Reilly, Richard Rouse, Ivan Sadovskyy, Lauri Sainiemi, Sydney Schreppler, V. G. Sidorkin, Amrita Singh, Shilpi Singh, S.P. Sinha, Patrick Sohr, Tomavs Stankevivc, Lieuwe J Stek, Henri J. Suominen, Judith Suter, V. N. Svidenko, Samuel M. L. Teicher, Mine Temuerhan, Nivetha Thiyagarajah, R. Tholapi, Mason Thomas, Emily Toomey, Shivendra Upadhyay, Ivica Urban, S. Vaitiek.enas, Kevin Van Hoogdalem, D V Viazmitinov, S. J. Waddy, D. J. van Woerkom, Dominik Vogel, John Watson, Joseph Weston, Georg W. Winkler, Chung-Kai Yang, Sean Shun Ming Yau, Daniel Choong Zhi Yi, E. Yucelen, A. Webster, Roland Zeisel, Ruichen Zhao 
TL;DR: In this article , the authors present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes.
Abstract: We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin \textit{et al.} [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at \textit{both} ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-$60\,\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.

19 citations



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TL;DR: In this article , the authors studied the n-GaN/p-Bi 2 Se 3 topological heterojunction for the topological surface states and analyzed by Raman and ultrafast transient absorption spectroscopy probed in visible and NIR regions.
Abstract: Abstract In topological insulators (TI) for surface electron transport, dissipationless surface states are required and are activated by symmetry breaking usually by reducing thickness of the film. Substrates play an important role in modulating the surface properties by modifying the surface electronic and mechanical properties. In the present work, we have studied the n-GaN/p-Bi 2 Se 3 topological heterojunction for the topological surface states and analyzed by Raman and ultrafast transient absorption (TA) spectroscopy probed in visible and NIR regions. Raman spectrum clearly shows the electron-phonon interaction at the surface by appearance of surface phonon modes (SPM) in heterojunction. TA spectroscopy is performed on Glass/Bi 2 Se 3 and n-GaN/Bi 2 Se 3 heterojunction to identify surface states, energy levels, charge transfer and carrier relaxation processes. Electrical measurements under dark and illuminated conditions were performed for deeper understanding of the interface states and their effect on electrical and optical performance. The study provides complete understanding of n-GaN/TI-based interfaces by spectroscopic and electrical measurements for their application in next-generation electronic and optical devices.

9 citations


Journal ArticleDOI
TL;DR: In this article , a synthesis technique to obtain ZnO nanoparticles (NPs) via laser ablation method in ambient atmosphere using a nanosecond pulse laser was reported.
Abstract: Heterojunction based metal oxide semiconductors have a great potential to detect toxic gases and volatile organic compounds. Here, we report a synthesis technique to obtain ZnO nanoparticles (NPs) via laser ablation method in ambient atmosphere using a nanosecond pulse laser. The laser ablated ZnO NPs were used for the decoration of sputtered deposited SnO 2 thin film to realize n-type ZnO/n-type SnO 2 heterojunction based formaldehyde (HCHO) gas sensor. Fabricated ZnO/SnO 2 sensor shows 3 times higher response (response = 20) to 50 ppm HCHO, faster response-recovery dynamics (τ res = 4 s and τ rec = 30 s) and better selectivity compared to pristine SnO 2 sensor at lower operating temperature (250 °C). The ZnO/SnO 2 heterojunction based sensor also can detect < 0.25 ppm HCHO, which allows for lower detectable limit of sub-ppm HCHO. Therefore, the ZnO/SnO 2 sensor shows enhanced sensing performance due to oxygen vacancies and n-n heterojunction structures provides more effective electrons for oxygen adsorption which speeds up the electronic transport at the interface of two materials. Synthesis of metal oxide composite NPs using pulse laser ablation method could be a promising alternative rapid route for the fabrication of highly sensitive gas sensors to detect most common indoor air pollutant. • Fabrication of highly selective and ultrasensitive n-SnO 2 /n-ZnO heterojunction-based formaldehyde gas sensor. • ZnO nanoparticles were synthesized using rapid and cost-effective laser ablation techniques in air. • The sensor exhibits high gas sensing response at 200 °C with ultra-low detection limit of 0.25 ppm. • SnO 2 /ZnO sensor shows better sensitivity and selectivity of as compared to pristine SnO 2 .

8 citations


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TL;DR: In this paper , isolated Pt SA-anchored CuCrO2 (CCO) has been designed by a glycine-nitrate solution combustion synthesis (SCS) route.
Abstract: Recent advances in heterogeneous catalysts indicate that single atoms (SAs), anchored/stabilized on metal oxide nanostructures, exhibit not only high catalyst atom efficiency but also intriguing reactivity and selectivity. Herein, isolated Pt SA-anchored CuCrO2 (CCO) has been designed by a glycine-nitrate solution combustion synthesis (SCS) route. The density of isolated Pt SAs achieves the highest value of ∼100 μm-2 for the 1.39 wt % Pt-anchored CCO sample, which results in the drastically boosted H2S response characteristics, including a high response of 1250 (35 times higher than that of pure CCO) at 10 ppm H2S and a low operating temperature of 100 °C. Except for CH4S, the responses of a 1.39 wt % Pt-anchored CCO chemiresistor to diverse vapors with concentrations of 50-100 ppm are less than 2, exhibiting excellent selectivity. Various ex situ characterizations indicate that the spillover catalytic effect of Pt SA sites, other than the conventional sulfuration-desulfuration mechanism, plays a dominant role in the outstanding H2S response characteristics.

8 citations


Journal ArticleDOI
TL;DR: In this paper , an amorphous TiO2 (aTiO2)-encapsulated Cs2AgBiBr6 double-perovskite nanocrystal (NC) was used for photocatalytic CO2 reduction.
Abstract: Photocatalytic reduction of CO2 is a promising strategy to alleviate the global energy crisis and environmental problems. Recently, metal halide perovskites with tunable bandgaps, large diffusion length, and abundant surface sites have drawn immense research interest for photocatalytic CO2 reduction reactions. In this work, we develop an amorphous TiO2 (aTiO2)-encapsulated Cs2AgBiBr6 double-perovskite nanocrystal (NC) by a room-temperature anti-solvent recrystallization method. Subsequently, we demonstrate the photocatalytic reduction of CO2 to CH4 (8.46 μmol g–1 h–1) and CO (5.72 μmol g–1 h–1) using this nanocomposite, where CH4 is the dominant product. The Cs2AgBiBr6–aTiO2 nanocomposite exhibits an 11-fold enhancement in the CH4 yield compared to pristine Cs2AgBiBr6 with prolonged stability of 16 h and higher selectivity of CH4 over harmful CO production. The reason for the product selectivity is attributed to the presence of adventitious Ti3+ on the surface of perovskite, which accelerates the CO2 activation mechanism. The solvent effect on the product formation is also studied with ethyl acetate, acetonitrile, and dioxane. CH4 becomes the dominant product in all of the cases, with an impressive evolution rate of 10.96 μmol g–1 h–1 in acetonitrile only. Impedance spectroscopy and ultrafast femtosecond transient absorption spectroscopy were used to establish the mechanism of CO2 reduction. It was also confirmed that aTiO2 helps in a faster and smoother charge transport at the interface by passivating the surface defects of the perovskite NCs. Our work provides a simple, highly efficient, and selective strategy for photocatalytic CO2 reduction using double-perovskite-based nanomaterial.

7 citations


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TL;DR: In this paper , a study focused on enhancing resilience of soybean crops to drought and salinity stresses by overexpression of GmFAD3A gene, which plays an important role in modulating membrane fluidity and ultimately influence plants response to various abiotic stresses.
Abstract: This study focused on enhancing resilience of soybean crops to drought and salinity stresses by overexpression of GmFAD3A gene, which plays an important role in modulating membrane fluidity and ultimately influence plants response to various abiotic stresses. Fatty acid desaturases (FADs) are a class of enzymes that mediate desaturation of fatty acids by introducing double bonds. They play an important role in modulating membrane fluidity in response to various abiotic stresses. However, a comprehensive analysis of GmFAD3 in drought and salinity stress tolerance in soybean is lacking. We used bean pod mottle virus (BPMV)-based vector for achieving rapid and efficient overexpression as well as silencing of Omega-3 Fatty Acid Desaturase gene from Glycine max (GmFAD3) to assess the functional role of GmFAD3 in abiotic stress responses in soybean. Higher levels of recombinant BPMV-GmFAD3A transcripts were detected in overexpressing soybean plants. Overexpression of GmFAD3A in soybean resulted in increased levels of jasmonic acid and higher expression of GmWRKY54 as compared to mock-inoculated, vector-infected and FAD3-silenced soybean plants under drought and salinity stress conditions. The GmFAD3A-overexpressing plants showed higher levels of chlorophyll content, efficient photosystem-II, relative water content, transpiration rate, stomatal conductance, proline content and also cooler canopy under drought and salinity stress conditions as compared to mock-inoculated, vector-infected and FAD3-silenced soybean plants. Results from the current study revealed that GmFAD3A-overexpressing soybean plants exhibited tolerance to drought and salinity stresses. However, soybean plants silenced for GmFAD3 were vulnerable to drought and salinity stresses.

6 citations



Journal ArticleDOI
TL;DR: In this paper , a queuing delay variation-based adaptive congestion control TCP variant, called Delay-based Adaptive Congestion Control (DACC), is proposed, which considers the presence of background flows.

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TL;DR: This review presents an account of the sources, uptake and transport, and phytotoxic effects of HMs with special attention to different mechanism/s, occurring to mitigate the HMs toxicity in plants employing SP technology.
Abstract: Abstract Unexpected bioaccumulation and biomagnification of heavy metal(loid)s (HMs) in the environment have become a predicament for all living organisms, including plants. The presence of these HMs in the plant system raised the level of reactive oxygen species (ROS) and remodeled several vital cellular biomolecules. These lead to several morphological, physiological, metabolic, and molecular aberrations in plants ranging from chlorosis of leaves to the lipid peroxidation of membranes, and degradation of proteins and nucleic acid including the modulation of the enzymatic system, which ultimately affects the plant growth and productivity. Plants are equipped with several mechanisms to counteract the HMs toxicity. Among them, seed priming (SP) technology has been widely tested with the use of several inorganic chemicals, plant growth regulators (PGRs), gasotransmitters, nanoparticles, living organisms, and plant leaf extracts. The use of these compounds has the potential to alleviate the HMs toxicity through the strengthening of the antioxidant defense system, generation of low molecular weight metallothionein’s (MTs), and phytochelatins (PCs), and improving seedling vigor during early growth stages. This review presents an account of the sources, uptake and transport, and phytotoxic effects of HMs with special attention to different mechanism/s, occurring to mitigate the HMs toxicity in plants employing SP technology. Novelty statement: To the best of our knowledge, this review has delineated the consequences of HMs on the crucial plant processes, which ultimately affect plant growth and development. This review also compiled the up to dated information on phytotoxicity of HMs through the use of SP technology, this review discussed how different types of SP approaches help in diminishing the concentration HMs in plant systems. Also, we depicted mechanisms, represent how HMs transport and their actions on cellular levels, and emphasized, how diverse SP technology effectiveness in the mitigation of plants' phytotoxicity in unique ways.

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TL;DR: In this article , the authors have comprehensively covered different sensing mechanisms used for metal oxide semiconductors (MOS) and discussed different parameters affecting the sensitivity and selectivity of the gas sensors.
Abstract: The usage of the gas sensor has been increasing very rapidly in the industry and in daily life for various potential applications. In the recent years, metal oxide semiconductors (MOS) become the primary choice for designing highly sensitive, stable, and low‐cost real‐life applications‐based gas sensors due to their inherent physical and chemical properties. Researchers have proposed numerous sensing mechanisms to explain the functionality of MOS‐based gas sensors. In this review, we have comprehensively covered different sensing mechanisms used for MOS. We have also discussed different parameters affecting the sensitivity and selectivity of the gas sensors. Moreover, the different techniques used to enhance the gas sensing response of MOS‐based sensors are also extensively covered. And finally, we give our prospective on recent opportunities and challenges on the future applications of MOS‐based gas sensors.

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TL;DR: In this article , the authors reported significantly enhanced sensitivity of AlGaN/GaN-based high electron mobility transistor (HEMT) sensor by targeted synthesis of IT and 2H coexisting phase MoS2 and applying the gate bias voltage.
Abstract: We report significantly enhanced sensitivity of AlGaN/GaN-based high electron mobility transistor (HEMT) sensor by the targeted synthesis of IT and 2H coexisting phase MoS2 and applying the gate bias voltage. The HEMT structures on Si (111) substrates were used for the detection of Hg2+ ions. The optimum sensitive regime in terms of V GS and V DS of the sensor was investigated by keeping the drain source voltage V DS constant at 2 V and by only varying the gate bias voltage V GS from 0 to 3 V. The strongest sensing response obtained from the device was around 0.547 mA ppb−1 at V GS = 3 V, which is 63.7% higher in comparison to the response achieved at 0 V which shows a sensing response of around 0.334 mA ppb−1. The current response depicts that the fabricated device is very sensitive and selective towards Hg2+ ions. Moreover, the detection limit of our sensor at 3 V was calculated around 6.21 ppt, which attributes to the strong field created between the gate electrode and the HEMT channel due to the presence of 1T metallic phase in synthesized MoS2, indicating that the lower detection limits are achievable in adequate strong fields.

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TL;DR: In this paper , a detailed review was carried out for hydrogen storage on graphene systems, apart from graphene few novel 2D systems were also studied regarding their application in hydrogen storage, which can be postulated that chemical storage is a suitable technique as compared to physical storage.
Abstract: Currently, hydrogen (H) is considered as a promising source of energy for future demands. Although, significant work is dedicated to the H production, but its storage is still a substantial challenge. Through this review report, it can be postulated that chemical storage is a suitable technique as compared to physical storage, since in physical storage, it requires higher temperature and pressure for hydrogen storage, whereas smaller amount of temperature and pressure is needed during the chemical process. Furthermore, a detailed review was carried out for hydrogen storage on graphene systems, apart from graphene few novel 2D systems were also studied regarding their application in hydrogen storage. Through detailed survey, it was observed that boron as a surface activating agent for various 2D sheets provides significant H wt% as compared to other impurity atoms used for various 2D sheets. Hence, it can be postulated that boron-doped systems can be good hydrogen storage agents. Further, transition metal di-chalcogenides (TMDCs) sheets are rarely used as host sheets for H storage, whereas TM impurities are considered for 2D sheets activation. In addition to above, the advantages and disadvantages of the different 2D systems for hydrogen storage are discussed and compared in a detailed manner.

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TL;DR: In this paper , a delay-based concurrent multi-path transfer (DB-CMT) approach is proposed, which transmits data on multiple paths according to their delay and selects the retransmission destination path to resend a lost data chunk.
Abstract: Abstract Stream Control Transmission Protocol (SCTP) exploits multiple network interfaces to provide multi-streaming and data chunk ordering in a stream. An extended feature of SCTP, i.e., Concurrent Multi-path Transfer (CMT), bids concurrent data transmission in a multi-path data transfer environment and guarantees bandwidth aggregation, load sharing, robustness, and reliability. In such an environment, the paths usually have distinct characteristics (i.e., delay, Packet Loss Rate (PLR), and bandwidth). Thus, data chunks are received out-of-ordered at the destination. As a result, CMT causes excessive receiver buffer blocking and unnecessary congestion window ( cwnd ) reductions. Also, during the selection of the retransmission destination path (to resend a lost data chunk), CMT does not take into account vital Quality of Service (QoS) parameters such as the PLR of a path under consideration. This paper introduces a new Delay-Based Concurrent Multi-path Transfer (DB-CMT) approach that transmits data on multiple paths according to their delay. In this scheme, we present a Delay-Based Data chunk Scheduling Policy (DB-DSP), a Retransmission Path Selection Policy (RTX-CL), and a new Delay-Based Fast Retransmission Policy (DB-FRP). The simulation results show that the DB-CMT’s RTX-CL policy performs better than the well-known RTX-CWND and RTX-LOSSRATE retransmission schemes. Also, the overall performance of DB-CMT witnesses improved throughput, fewer timeouts, and reduced File Transfer Time (FTT) performances.

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TL;DR: In this article , the optical properties of atomically thin semiconducting 2D materials have been investigated using excitonic quasi-particles, excitons/trions/bi-excitons, and their coupling with phonons and charge carriers.
Abstract: Excitonic quasi-particles, excitons/trions/bi-excitons, and their coupling with phonons and charge carriers play a crucial role in controlling the optical properties of atomically thin semiconducting 2D materials. In this work, we...

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TL;DR: A comprehensive study of R. solani interaction using three hosts, namely, Pusa Basmati-1 (cultivated rice), O. grandiglumis (wild rice), and NDB-1445 (barley) would interpret wider possibilities in the dissection of the protein(s) induced during the infection process.
Abstract: Rhizoctonia solani is a soil-borne fungus causing sheath blight disease in cereal crops including rice. Genetic resistance to sheath blight disease in cereal crops is not well understood in most of the host(s). Aside from this, a comparative study on the different hosts at the biochemical and proteomic level upon R. solani infection was not reported earlier. Here, we performed proteomic based analysis and studied defense pathways among cultivated rice (cv. Pusa Basmati-1), wild rice accession (Oryza grandiglumis), and barley (cv. NDB-1445) after inoculation with R. solani. Increased levels of phenol, peroxidase, and β-1, 3-glucanase were observed in infected tissue as compared to the control in all of the hosts. Wild rice accession O. grandiglumis showed a higher level of biochemical signals than barley cv. NDB 1445 and cultivated rice cv. Pusa Basmati-1. Using two-dimensional polyacrylamide gel electrophoresis (2D-PAGE) and mass spectrometry (MS), differently expressed proteins were also studied in control and after inoculation with R. solani. Wild rice accession O. grandiglumis induced a cysteine protease inhibitor and zinc finger proteins, which have defense functions and resistance against fungal pathogens. On the other hand, barley cv. NDB-1445 and cultivated rice cv. Pusa Basmati-1 mainly induce energy metabolism-related proteins/signals after inoculation with R. solani in comparison to wild rice accession O. grandiglumis. The present comprehensive study of R. solani interaction using three hosts, namely, Pusa Basmati-1 (cultivated rice), O. grandiglumis (wild rice), and NDB-1445 (barley) would interpret wider possibilities in the dissection of the protein(s) induced during the infection process. These proteins may further be correlated to the gene(s) and other related molecular tools that will help for the marker-assisted breeding and/or gene editing for this distressing disease among the major cereal crops.

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TL;DR: In this paper , the authors reported Bi2Te2Se/n-GaN topological insulator/ semiconductor heterojunction fabrication where, Bi2Se was thermally evaporated over n-type GaN substrates.

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TL;DR: In this paper , an integrated analysis of amount of groundwater use, productivity, profitability, resource-use efficiency (RUE), and environmental impacts of three cluster bean-based cropping systems was carried out.

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TL;DR: In this paper , a study was conducted on Frieswal bulls (N=378, age: 6-91 months, m) to assess age-wise growth dynamics of pelvic dimensions, classifying age into 6 groups (6m, 7-12m, 13-24m, 25-36m, 37-48m, >48m).
Abstract: Associations of pelvic linear type traits (PLT) on production and reproduction of cows were widely documented, in contrast, importance of PLT on bulls' reproductive ability, semen quality, semen cryo-preservability, frozen semen doses (FSD) production etc. inadequately reported. Present study was conducted on Frieswal bulls (N=378, age: 6-91months, m) to assess age-wise growth dynamics of pelvic dimensions, classifying age into 6 groups (6m, 7-12m, 13-24m, 25-36m, 37-48m, >48m). Iso-age group bulls' (N=100; 25-36m) records were analyzed after classifying seasons (summer/rainy/winter) of semen collection, if pelvic morphometric traits had any practical associations with testicular traits, semen quality and FSD production or not. A discriminant function was developed based on PLT, which showed poor predictive ability to distinguish FSD/Non-FSD category bulls. Age significantly influenced growth and dimensions of gonadal and external pelvic morphometry traits. The dimensions of PLT increased at higher rate up to 36m age and thereafter enhancement became insignificant. PLT were positively (P<0.01) associated with testicular/scrotal traits. Among PLT studied, pelvic triangle area (PTA) was the strongest discriminating variable to distinguish between good and poor breeding bulls. Bulls of larger PTA (≥1000cm2 ) at average 30m age, produced relatively inferior quality semen viz. lower volume (-3%), sperm concentration (-48x106 /mL), motility, semen quality index, total sperm counts/ejaculate (-601x106 ), motile sperm counts/ejaculate (-474x106 ) and total post-thaw motile sperm counts (-226x106 ) than bulls of lesser PTA (<1000cm2 ). It was concluded that external PTA could be a useful addition to the bulls' breeding soundness evaluation.

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TL;DR: In this article , the authors reported the age related changes in body linear type traits in Frieswal (N=378) dairy bulls and its relevance with reproductive potentials of breeding bulls.
Abstract: Linear type traits are easily measurable phenotypic characteristics that help breed characterization, selection of animals for breeding and found to be associated with animals' performance. Unlike cows, there have been limited studies linking body linear traits with male reproductive ability and semen cryo-preservability of breeding bulls. Present study reported the age related changes in body linear type traits in Frieswal (N=378) dairy bulls and its relevance with reproductive potentials of breeding bulls. Our results indicated that body frame size traits were significantly and positively correlated with gonadal linear traits. Among the selected body mophometric parameters body length, chest girth and head circumference were the important body linear type traits having capability to discriminate between bulls of frozen semen doses (FSD) and Non-FSD categories. Discriminant function has been developed based on body linear traits of crossbred dairy bulls to find out males of superior reproductive potentials. Our finding provided evidence that body length (humerous tuberosity to tuber ischii) was the most powerful linear body trait associated with breeding bulls' reproductive ability and semen quality.

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TL;DR: In this article , the authors comprehensively review the recent advancements of MXenes in various potential fields including energy conversion and storage, wearable flexible electronic devices, chemical detection, and biomedical engineering, and present some of the most exciting prospects by combining MXenes with other materials and forming mixed dimensional high performance heterostructures based novel electronic devices.
Abstract: MXenes, are a rapidly growing family of two-dimensional materials exhibiting outstanding electronic, optical, mechanical, and thermal properties with versatile transition metal and surface chemistries. A wide range of transition metals and surface termination groups facilitate the properties of MXenes to be easily tuneable. Due to the physically strong and environmentally stable nature of MXenes, they have already had a strong presence in different fields, for instance energy storage, electrocatalysis, water purification, and chemical sensing. Some of the newly discovered applications of MXenes showed very promising results, however, they have not been covered in any review article. Therefore, in this review we comprehensively review the recent advancements of MXenes in various potential fields including energy conversion and storage, wearable flexible electronic devices, chemical detection, and biomedical engineering. We have also presented some of the most exciting prospects by combining MXenes with other materials and forming mixed dimensional high performance heterostructures based novel electronic devices.

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TL;DR: In this article , high luminescent methylammonium lead halide perovskite nanocrystals have attracted considerable research interest due to their alluring properties which can be tuned as per the morphological variations.
Abstract: High luminescent methylammonium lead halide perovskite nanocrystals (PNCs) have attracted considerable research interest due to their alluring properties which can be tuned as per the morphological variations. Charge transfer excitons...

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TL;DR: The significance of two-dimensional (2D) materials including graphene, and transition metal dichalcogenides has been escalating in gas sensor technology owing to detection of gases at room temperature (RT) and good performance as discussed by the authors .
Abstract: The significance of two-dimensional (2D) materials including graphene, and transition metal dichalcogenides has been escalating in gas sensor technology owing to detection of gases at room temperature (RT) and good...

DOI
TL;DR: In this article , the molybdenum disulfide (MoS2)-decorated Fe2O3 thin-film-based NO2 gas sensor was presented.
Abstract: Over the past few decades, metal oxide-based thin-film sensors have been widely studied and commercialized for gas sensing applications, but their poor sensing response and high-temperature operation (300 °C) are the issues to be addressed. Here, we demonstrate the molybdenum disulfide (MoS2) decorated $\alpha $ -Fe2O3 thin-film-based NO2 gas sensor. The $\alpha $ -Fe2O3 thin film was deposited on silicon substrate using the RF magnetron sputtering technique at 600 °C substrate temperature. The $\alpha $ -Fe2O3 thin films were characterized using an X-ray diffractometer and a scanning electron microscope for structural and morphological characterizations. Furthermore, we decorated the Fe2O3 thin film using hydrothermally synthesized MoS2 nanoparticles dispersed in ethanol via the drop-casting method to increase the response toward NO2 gas. The MoS2 decorated sensor shows a fast gas detection with the improved response of ( $\Delta \text{R}/\text{R}_{a}$ %) of ~69% at 150 °C for 100ppm of NO2 gas, which is 68% higher compared to the pristine sample (~42%). The sensor shows a fast response time of ~34 s and a moderate recovery time of ~95 s. The decoration of MoS2 nanoparticles has increased the surface-to-volume ratio and active sites and hence increased the number of gas molecules that can react with the surface of the sample. The sensor shows high sensitivity and selectivity toward NO2 due to increased holes and reduced barrier height in MoS2/ $\alpha $ -Fe2O3 p-p heterojunctions.


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TL;DR: In this paper , the authors identify high plant density stress tolerant (at 30 percent higher plant population than cultural practice) high yielding maize inbreds and identify specific cross combinations exhibiting higher grain yield under HDP than normal planting practices.
Abstract: High density planting (HDP) has been used extensively to achieve high productivity in temperate maize and the same can be exploited in tropical/subtropical maize. Based on two years field evaluation of tropical maize inbred lines under different planting regimes, this study led to identification of high plant density stress tolerant (at 30 percent higher plant population than cultural practice) high yielding maize inbreds. Leaf angle of first leaf above ear, anthesis-silking interval, cob length, and 1000 kernel weight were found directly affecting grain yield under HDP. Specific cross combinations exhibiting higher grain yield under HDP (approx. 15-20 percent), than normal planting practices, were identified. This is the first report on systematic development and evaluation of parental lines under high plant population and to generate high plant density stress tolerant hybrids in tropical maize.

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TL;DR: In this article , the effects of transition method doped atoms (i.e., Mn, Ni, and Sc) on the single vacancy (SV) h-BN and SiC systems using first principles calculations were analyzed.
Abstract: Here, we studied two different 2D monolayer systems (i.e., h-BN and SiC), which exhibit unique electronic and magnetic properties. We analyzed the effects of Transition Methods (TM) doped atoms (i.e., Mn, Ni, and Sc) on the single vacancy (SV) h-BN and SiC systems using first principles calculations. Through comparison we found that Mn substitution in SV h-BN and SiC can modify their electronic and magnetic properties having larger magnetic moment as compared to other dopants (i.e., Ni and Sc.). Band structure and PDOS plots confirmed that TM doping in SV h-BN can convert the pure h-BN (insulator) to semiconductor, metal, or semi-metal, it is also observed from the results that Mn-doped h-BN has higher band gap approximately equal to Eg ~ 2.7 eV during the negative spin and has smaller band gap, that is, (Eg ~ 1.1 eV) during the positive spin. Similarly doping with the TM atoms on the SV SiC monolayer system can convert pure SiC to metal or half metal. In addition, Mn-doped SiC showed semimetal property having 0 eV band gap. These finding will help us to vary the electronic and magnetic properties of the pure h-BN and SiC sheets which can be used for the opto-electronic and spintronic applications.