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Mahesh Kumar

Bio: Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.


Papers
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TL;DR: Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE) as discussed by the authors.

16 citations

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TL;DR: In this paper, a MoS2/Si heterojunction was fabricated by exfoliating MoS 2 on top of the silicon substrate, and a type-II band alignment was determined for the transport of photoexcited carriers.
Abstract: To understand the different mechanism occurring at the MoS2-silicon interface, we have fabricated a MoS2/Si heterojunction by exfoliating MoS2 on top of the silicon substrate. Raman spectroscopy and atomic force microscopy (AFM) measurement expose the signature of few-layers in the deposited MoS2 flake. Herein, the temperature dependence of the energy barrier and carrier density at the MoS2/Si heterojunction has been extensively investigated. Furthermore, to study band alignment at the MoS2/Si interface, we have calculated a valence band offset of 0.66 ± 0.17 eV and a conduction band offset of 0.42 ± 0.17 eV using X-ray and Ultraviolet photoelectron spectroscopy. We determined a type-II band alignment at the interface which is very conducive for the transport of photoexcited carriers. As a proof-of-concept application, we extend our analysis of the photovoltaic behavior of the MoS2/Si heterojunction. This work provides not only a comparative study between MoS2/p-Si and MoS2/n-Si heterojunctions but also paves the way to engineer the properties of the interface for the future integration of MoS2 with silicon.

16 citations

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TL;DR: In this paper, the growth of non-polar a-plane GaN epilayers was confirmed by high resolution X-ray diffraction (HRXRD) study and the effect of growth temperature on structural, morphological and optical properties has been studied.

16 citations

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TL;DR: In this paper, the dielectric constant as a function of temperature and frequency was obtained in the temperature range 35-180°C at 10 and 100 kHz. But the authors did not consider the phase transition of Ba0.96Bi0.04Ti 0.96Fe 0.04O3.
Abstract: Samples of Ba0.96Bi0.04Ti0.96Fe0.04O3 were prepared by a solid state reaction method. Data on the dielectric constant as a function of temperature and frequency were obtained in the temperature range 35–180 °C at 10 and 100 kHz. The material shows a diffuse phase transition. With increasing frequency, the transition temperature shifts towards lower temperature, resembling that of a relaxor ferroelectric with a negative shift in Tc. Impedance analysis confirms the relaxor behavior.

15 citations

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TL;DR: In this article, InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system and the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs.
Abstract: InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system. Variation of the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs. As the growth temperature was increased from 100 C to 300 degrees C, an enlargement of QD size and a drop in dot density were observed, which was led by the limitation of surface diffusion of adatoms with the limited thermal energy. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to assess the QDs size and density. The chemical bonding configurations of InN QDs were examined by X-ray photo-electron spectroscopy (XPS). Fourier transform infrared (FTIR) spectrum of the deposited InN QDs shows the presence of In-N bond. Temperature-dependent photoluminescence (PL) measurements showed that the emission peak energies of the InN QDs are sensitive to temperature and show a strong peak emission at 0.79 eV.

15 citations


Cited by
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7,335 citations

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TL;DR: In this paper, general guidelines for the development of lead-free piezoelectric ceramics are presented, ranging from atom to phase diagram, and the current development stage in lead free piezoceramics is then critically assessed.
Abstract: A large body of work has been reported in the last 5 years on the development of lead-free piezoceramics in the quest to replace lead–zirconate–titanate (PZT) as the main material for electromechanical devices such as actuators, sensors, and transducers. In specific but narrow application ranges the new materials appear adequate, but are not yet suited to replace PZT on a broader basis. In this paper, general guidelines for the development of lead-free piezoelectric ceramics are presented. Suitable chemical elements are selected first on the basis of cost and toxicity as well as ionic polarizability. Different crystal structures with these elements are then considered based on simple concepts, and a variety of phase diagrams are described with attractive morphotropic phase boundaries, yielding good piezoelectric properties. Finally, lessons from density functional theory are reviewed and used to adjust our understanding based on the simpler concepts. Equipped with these guidelines ranging from atom to phase diagram, the current development stage in lead-free piezoceramics is then critically assessed.

2,510 citations

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TL;DR: In this article, a single-phased ferroelectromagnet BiFeO3 ceramics with high resistivity were synthesized by a rapid liquid phase sintering technique.
Abstract: Single-phased ferroelectromagnet BiFeO3 ceramics with high resistivity were synthesized by a rapid liquid phase sintering technique. Saturated ferroelectric hysteresis loops were observed at room temperature in the ceramics sintered at 880 °C for 450 s. The spontaneous polarization, remnant polarization, and the coercive field are 8.9 μC/cm2, 4.0 μC/cm2, and 39 kV/cm, respectively, under an applied field of 100 kV/cm. It is proposed that the formation of Fe2+ and an oxygen deficiency leading to the higher leakage can be greatly suppressed by the very high heating rate, short sintering period, and liquid phase sintering technique. The latter was also found effective in increasing the density of the ceramics. The sintering technique developed in this work is expected to be useful in synthesizing other ceramics from multivalent or volatile starting materials.

970 citations

Journal ArticleDOI
Ling Zhu1, Wen Zeng1
TL;DR: In this paper, the room-temperature gas sensing properties of ZnO-based gas sensors are comprehensively reviewed, and more attention is particularly paid to the effective strategies that create room temperature gas sensing, mainly including surface modification, additive doping and light activation.
Abstract: Novel gas sensors with high sensing properties, simultaneously operating at room temperature are considerably more attractive owing to their low power consumption, high security and long-term stability. Till date, zinc oxide (ZnO) as semiconducting metal oxide is considered as the promising resistive-type gas sensing material, but elevated operating temperature becomes the bottleneck of its extensive applications in the field of real-time gas monitoring, especially in flammable and explosive gas atmosphere. In this respect, worldwide efforts have been devoted to reducing the operating temperature by means of multiple methods In this communication, room-temperature gas sensing properties of ZnO based gas sensors are comprehensively reviewed. Much more attention is particularly paid to the effective strategies that create room-temperature gas sensing of ZnO based gas sensors, mainly including surface modification, additive doping and light activation. Finally, some perspectives for future investigation on room-temperature gas-sensing materials are discussed as well.

756 citations