M
Mahesh Kumar
Researcher at Indian Institute of Technology, Jodhpur
Publications - 266
Citations - 6760
Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.
Papers
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Electrical and dielectric properties in double doped BaTiO3 showing relaxor behavior
TL;DR: BaTiO3, when doped with minute concentrations of Bi+3 and Fe+3, was found to exhibit relaxor behavior as mentioned in this paper, and the results have been discussed using impedance and modulus spectroscopy.
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Enhanced Carrier Density in a MoS 2 /Si Heterojunction-Based Photodetector by Inverse Auger Process
TL;DR: In this article, the authors have demonstrated an ultrasensitive photodetector based on MoS2/Si (for both p-type and n-type Si) van der Walls (vdW) heterojunction, which provides a high photoresponsivity of greater than 103 A/W along with a large detectivity of ≈ 1012 Jones.
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Growth and NO2 gas sensing mechanisms of vertically aligned 2D SnS2 flakes by CVD: Experimental and DFT studies
Ashok Kumar,Ilya Lensky,Neelu Sharma,Akash Popat Gutal,Deepu Kumar,Pradeep Kumar,Manikandan Paranjothy,Mahesh Kumar +7 more
TL;DR: In this paper, a highly selective and sensitive NO2 gas sensor using vertically aligned 2D SnS2 flakes, grown by a chemical vapor deposition method in controlled gas flow, was demonstrated.
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The influence of Cu substitution for Ru on the magnetic behaviour of a weak ferromagnet, Ca3LiRuO6
TL;DR: In this article, the influence of gradual Cu substitution for Ru on the magnetic characteristics of a weak ferromagnet, Ca3LiRuO6 (with a magnetic ordering temperature of 113 K), is reported as obtained by magnetization studies.
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Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE
Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +8 more
TL;DR: In this article, a systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time.