M
Mahesh Kumar
Researcher at Indian Institute of Technology, Jodhpur
Publications - 266
Citations - 6760
Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.
Papers
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Journal ArticleDOI
Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy
Mohana K. Rajpalke,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mahesh Kumar,Mahesh Kumar,Neeraj Sinha,Neeraj Sinha,V. M. Jali,S. B. Krupanidhi +9 more
TL;DR: In this paper, the growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study and the film grown at 500 °C showed better crystallinity with the rocking curve FWHM 067° and 085° along [0 0 0 1] and [1 -1 0 0 0] directions, respectively.
Journal ArticleDOI
Proteo-Molecular Investigation of Cultivated Rice, Wild Rice, and Barley Provides Clues of Defense Responses against Rhizoctonia solani Infection
Md. Shamim,Divakar Sharma,Deepa Bisht,Rashmi Prem Prakash Maurya,Mayank Kaashyap,Deepti Srivastava,A. K. Mishra,Deepak Kumar,Mahesh Kumar,Vijaya Juturu,N. A. Khan,Sameer Chaudhary,Raja Hussain,Kapildeo N. Singh +13 more
TL;DR: A comprehensive study of R. solani interaction using three hosts, namely, Pusa Basmati-1 (cultivated rice), O. grandiglumis (wild rice), and NDB-1445 (barley) would interpret wider possibilities in the dissection of the protein(s) induced during the infection process.
Journal ArticleDOI
Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: In this paper, the influence of carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is discussed, and the position of the Fermi-level in InN films was modulated by the carrier concentration.
Journal Article
Vacuum thermal deposition of crystalline, uniform and stoichiometric CdS thin films in ambient H2S atmosphere
TL;DR: In this article, crystalline, uniform and stoichiometric thin films of CdS were fabricated on soda lime glass (SLG) substrates using vacuum thermal deposition method in the presence of hydrogen sulphide (H 2 S) atmosphere.
Proceedings ArticleDOI
Detection of cadmium ions Byg-C3N4 functionalization on AlGaN/GaN high electron mobility transistor
Adarsh Nigam,Mahesh Kumar +1 more
TL;DR: In this paper, a novel, highly sensitive AlGaN/GaN high electron mobility transistor (HEMT) sensor is demonstrated for the detection of cadmium ions by the functionalization of graphitic carbon nitride (g-C3N4).