M
Mahesh Kumar
Researcher at Indian Institute of Technology, Jodhpur
Publications - 266
Citations - 6760
Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.
Papers
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Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
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Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature
Abhay V. Agrawal,Rajesh Kumar,Swaminathan Venkatesan,Alex Zakhidov,Zhuan Zhu,Jiming Bao,Mahesh Kumar,Mukesh Kumar +7 more
TL;DR: In this article, the authors reported strong evidence for preferential hydrogen adsorption at edge-sites in an edge oriented vertically aligned 3-D network of MoS2 flakes at room temperature.
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Graphene Oxide–Silver Nanowire Nanocompositesfor Enhanced Sensing of Hg 2+
Tawabur Rahman,Faisal Kabir,Ashim Gurung,Khan Mamun Reza,Rajesh Pathak,Nabin Ghimire,Aravind Baride,Zhenqiang Wang,Mahesh Kumar,Qiquan Qiao +9 more
TL;DR: In this article, a highly sensitive and selective sensing platform for the electrochemical detection of Hg2+ in aqueous media was demonstrated. And a graphene oxide (GO) and silver nanowire (AgNW) nanocomposites were modified for the detection.
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Growth and characterization of high resistivity c-axis oriented ZnO films on different substrates by RF magnetron sputtering for MEMS applications
TL;DR: In this article, the authors reported the deposition of high resistivity c-axis oriented ZnO films by RF magnetron sputtering, which were evaluated using XRD analysis.
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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
Basanta Roul,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Mahesh Kumar,A. T. Kalghatgi,S. B. Krupanidhi,Nitesh Kumar,A. Sundaresan +7 more
TL;DR: In this article, the authors have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior.