M
Mahesh R. Neupane
Researcher at United States Army Research Laboratory
Publications - 67
Citations - 1591
Mahesh R. Neupane is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Band gap & Diamond. The author has an hindex of 17, co-authored 52 publications receiving 1165 citations. Previous affiliations of Mahesh R. Neupane include California State University, San Bernardino & University of California, Riverside.
Papers
More filters
Journal ArticleDOI
Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.
Yuan Huang,Eli Sutter,Jerzy T. Sadowski,Mircea Cotlet,Oliver L.A. Monti,David A. Racke,Mahesh R. Neupane,Darshana Wickramaratne,Roger K. Lake,Bruce A. Parkinson,Peter Sutter +10 more
TL;DR: A comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit is reported, showing that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer.
Journal ArticleDOI
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
Yunqiu Kelly Luo,Jinsong Xu,Tiancong Zhu,Guanzhong Wu,Elizabeth McCormick,Wenbo Zhan,Mahesh R. Neupane,Roland Kawakami +7 more
TL;DR: In this paper, a few-layer graphene hybrid spin valve was used for spin injection across a transition metal dichalcogenides (TMD) and a few layer transition metal semiconductor (MoS2) interface.
Journal Article
Opto-Valleytronic Spin Injection in Monolayer MoS 2 /Few-Layer Graphene Hybrid Spin Valves
Yunqiu Luo,Jinsong Xu,Tiancong Zhu,Guanzhong Wu,Elizabeth McCormick,Wenbo Zhan,Mahesh R. Neupane,Roland Kawakami +7 more
TL;DR: This Letter fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrates, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.
Journal ArticleDOI
Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride.
Soumyabrata Roy,Xiang Zhang,Anand B. Puthirath,Ashokkumar Meiyazhagan,Sohini Bhattacharyya,Muhammad M. Rahman,Ganguli Babu,Sandhya Susarla,Sreehari K. Saju,Mai Kim Tran,Lucas M. Sassi,M. A. S. R. Saadi,Jiawei Lai,Onur Sahin,Seyed Mohammad Sajadi,Bhuvaneswari Dharmarajan,Devashish Salpekar,Nithya Chakingal,Abhijit Baburaj,Xinting Shuai,Aparna Adumbumkulath,Kristen A. Miller,Jessica M Gayle,Alec Ajnsztajn,Thibeorchews Prasankumar,Vijay Vedhan Jayanthi Harikrishnan,Ved Ojha,Harikishan Kannan,Ali Zein Khater,Zhenwei Zhu,Sathvik Ajay Iyengar,Pedro A. S. Autreto,Pedro A. S. Autreto,Eliezer Fernando Oliveira,Eliezer Fernando Oliveira,Guanhui Gao,A. Glen Birdwell,Mahesh R. Neupane,Tony Ivanov,Jaime Taha-Tijerina,Jaime Taha-Tijerina,Jaime Taha-Tijerina,Ram Manohar Yadav,Sivaram Arepalli,Robert Vajtai,Pulickel M. Ajayan +45 more
TL;DR: In this paper, the structural, electrical, mechanical, optical, and thermal properties of 2D hexagonal boron nitride (h-BN) have been extensively studied.
Journal ArticleDOI
Direct bandgap transition in many-layer MoS2 by plasma-induced layer decoupling.
Rohan Dhall,Mahesh R. Neupane,Darshana Wickramaratne,Matthew Mecklenburg,Zhen Li,Cameron Moore,Roger K. Lake,Stephen B. Cronin +7 more
TL;DR: A robust method for engineering the optoelectronic properties of many-layer MoS2 using low-energy oxygen plasma treatment is reported, indicating that this method is robust and scalable.