M
Man Chang
Researcher at Samsung
Publications - 77
Citations - 4236
Man Chang is an academic researcher from Samsung. The author has contributed to research in topics: Non-volatile memory & Resistive random-access memory. The author has an hindex of 22, co-authored 77 publications receiving 3838 citations. Previous affiliations of Man Chang include Kyungpook National University & Gwangju Institute of Science and Technology.
Papers
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Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Gyeong-Su Park,Young-Bae Kim,Seongyong Park,Xiang Shu Li,Sung Heo,Myoung-Jae Lee,Man Chang,Ji-Hwan Kwon,Miyoung Kim,U-In Chung,Regina Dittmann,Rainer Waser,Kinam Kim +12 more
TL;DR: In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO2-x base layer, which consist of nanoscale TaO1-x filaments.
Journal ArticleDOI
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Sungho Kim,Sae-jin Kim,Kyung-min Kim,Seung Ryul Lee,Man Chang,Eun-ju Cho,Young-Bae Kim,Chang Jung Kim,U. In Chung,In-Kyeong Yoo +9 more
TL;DR: A complete electro-thermal resistive switching model based on the finite element method is proposed that accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive Switching.
Proceedings ArticleDOI
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
Seung Ryul Lee,Young-Bae Kim,Man Chang,Kyung-min Kim,Chang Bum Lee,Ji-Hyun Hur,Gyeong-Su Park,Dongsoo Lee,Myoung-Jae Lee,Chang Jung Kim,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: Morevoer et al. as mentioned in this paper used a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications, which achieved more than 107 cycles of switching endurance and 10 years of data retention at 85°C.
Proceedings Article
Bi-layered RRAM with unlimited endurance and extremely uniform switching
Young-Bae Kim,Seung Ryul Lee,Dongsoo Lee,Chang Bum Lee,Man Chang,Ji-Hyun Hur,Myoung-Jae Lee,Gyeong-Su Park,Chang Jung Kim,U-In Chung,In-Kyeong Yoo,Kinam Kim +11 more
TL;DR: This work demonstrates resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory based on the modulated Schottky barrier modeling.