scispace - formally typeset
Search or ask a question
Author

Manoj Kumar Rajbhar

Bio: Manoj Kumar Rajbhar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Charge carrier & Nanocrystal. The author has co-authored 1 publications.

Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the effect of RTA and FA on the conduction of charge carriers has been studied for the fabricated devices, and it is found from the currentvoltage measurements that the carrier transport is controlled by the space charge limited current conduction mechanism, and the observed values of parameter m (trap density and the distribution of localized state) for the FA and RTA devices are ~2 and 4.1, respectively.
Abstract: Synthesis of nanoparticles in insulators attracts tremendous attention due to their unique electrical and optical properties. Here, the gallium (Ga) and gallium nitride (GaN) nanoclusters have been synthesized in the silicon nitride matrix by sequential ion implantation (gallium and nitrogen ions) followed by either furnace annealing (FA) or rapid thermal annealing (RTA). The presence of Ga and GaN nanoclusters has been confirmed by Fourier-transform infrared, Raman and X-ray photoelectron spectroscopy. Thereafter, the effect of RTA and FA on the conduction of charge carriers has been studied for the fabricated devices. It is found from the current–voltage measurements that the carrier transport is controlled by the space charge limited current conduction mechanism, and the observed values of parameter m (trap density and the distribution of localized state) for the FA and RTA devices are ~2 and ~4.1, respectively. This reveals that more defects are formed in the RTA device and that FA provides better performance than RTA from the viewpoint of opto- and nano-electronic applications.

1 citations


Cited by
More filters
Journal ArticleDOI
15 Feb 2023-Crystals
TL;DR: In this article , the authors estimate volt-ampere characteristics at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4.
Abstract: The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.