M
Manuel Bibes
Researcher at Université Paris-Saclay
Publications - 325
Citations - 25533
Manuel Bibes is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 72, co-authored 303 publications receiving 22037 citations. Previous affiliations of Manuel Bibes include Autonomous University of Barcelona & Centre national de la recherche scientifique.
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Journal ArticleDOI
Multiferroics: Towards a magnetoelectric memory
Manuel Bibes,Agnès Barthélémy +1 more
TL;DR: The room-temperature manipulation of magnetization by an electric field using the multiferroic BiFeO3 represents an essential step towards the magnetoelectric control of spintronics devices.
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Tunnel junctions with multiferroic barriers
M. Gajek,M. Gajek,Manuel Bibes,Stéphane Fusil,Karim Bouzehouane,Josep Fontcuberta,Agnès Barthélémy,Albert Fert +7 more
TL;DR: This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.
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A ferroelectric memristor
André Chanthbouala,Vincent Garcia,Ryan O. Cherifi,Karim Bouzehouane,Stéphane Fusil,Stéphane Fusil,Xavier Moya,Stéphane Xavier,Hiroyuki Yamada,Hiroyuki Yamada,Cyrile Deranlot,Neil D. Mathur,Manuel Bibes,Agnès Barthélémy,Julie Grollier +14 more
TL;DR: It is demonstrated that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed.
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Giant tunnel electroresistance for non-destructive readout of ferroelectric states
Vincent Garcia,Stéphane Fusil,Stéphane Fusil,Karim Bouzehouane,Shaïma Enouz-Vedrenne,Neil D. Mathur,Agnès Barthélémy,Manuel Bibes +7 more
TL;DR: The approach exploits the otherwise undesirable leakage current—dominated by tunnelling at these very low thicknesses—to read the polarization state without destroying it, and demonstrates scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch-2.
Journal ArticleDOI
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
Martin Bowen,Manuel Bibes,Alain Barthélémy,J.-P. Contour,Abdelmadjid Anane,Y. Lemaitre,Albert Fert +6 more
TL;DR: In this paper, a magnetoresistance ratio of more than 1800% is obtained at 4 K, from which they infer an electrode spin polarization of at least 95% and demonstrate the half-metallic nature of mixed-valence manganites and demonstrates their capability as a spin analyzer.