M
Marc Bocquet
Researcher at Aix-Marseille University
Publications - 97
Citations - 1656
Marc Bocquet is an academic researcher from Aix-Marseille University. The author has contributed to research in topics: Resistive random-access memory & Artificial neural network. The author has an hindex of 19, co-authored 97 publications receiving 1280 citations. Previous affiliations of Marc Bocquet include Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
Marc Bocquet,Damien Deleruyelle,Hassen Aziza,Christophe Muller,Jean-Michel Portal,T. Cabout,E. Jalaguier +6 more
TL;DR: In this article, a physics-based compact model used in electrical simulator for bipolar OxRAM memories is confronted to experimental electrical data and the excellent agreement with these data suggests that this model can be confidently implemented into circuit simulators for design purpose.
Journal ArticleDOI
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
Weisheng Zhao,Mathieu Moreau,Erya Deng,Yue Zhang,Jean-Michel Portal,Jacques-Olivier Klein,Marc Bocquet,Hassen Aziza,Damien Deleruyelle,Christophe Muller,Damien Querlioz,Nesrine Ben Romdhane,Dafiné Ravelosona,Claude Chappert +13 more
TL;DR: A theoretical investigation of synchronous NV logic gates based on RS memories (RS-NVL) is presented and special design techniques and strategies are proposed to optimize the structure according to different resistive characteristics of NVMs.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.
Journal ArticleDOI
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
TL;DR: In this article, the authors investigated the multilevel resistance variability in a TaOx-based nanoscale resistive random access memory (RRAM) operated in MLC mode and found that the resistance variability not only depends on the conductive filament size but also is a strong function of oxygen vacancy concentration in it.
Journal ArticleDOI
Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays.
Tifenn Hirtzlin,Marc Bocquet,Bogdan Penkovsky,Jacques-Olivier Klein,Etienne Nowak,Elisa Vianello,Jean-Michel Portal,Damien Querlioz +7 more
TL;DR: This work proposes a strategy for implementing low-energy Binarized Neural Networks that employs brain-inspired concepts while retaining the energy benefits of digital electronics, and designs, fabricate, and test a memory array that is optimized for this in-memory computing scheme.