Marc Juhel

Bio: Marc Juhel is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Silicon & Secondary ion mass spectrometry. The author has an hindex of 12, co-authored 58 publications receiving 432 citations.

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Abstract: Titanium nitride (TiN) films were deposited using plasma-enhanced atomic layer deposition (PEALD) from the organometallic precursor tetrakis-dimethyl-amino-titanium (TDMAT) with hydrogen (H 2 ) as a coreactant. Low-resistivity values lying from 210 to 275 μΩ cm were achieved for 10 nm thick films deposited at low temperature: 150°C. The effects of temperature, plasma time, and plasma power were investigated. It was demonstrated that the chemical reaction is complementary and self-limiting. A minimum energy is necessary to reach the low-resistivity plateau. Chemical and physical properties of the films are also reported and a surface reaction mechanism is proposed. It is suggested that after TDMAT chemisorption to the surface, amines are removed by hydrogen radicals, and at the same time, titanium carbide bonds (Ti-C) are formed. The low resistivity results from the presence of Ti 2 C or Ti 2 N phases in the PEALD TiN film. The industrial viability of this process was also evaluated on 300 mm wafers. Good performances were obtained on wafer-to-wafer uniformity and step coverage, while some improvements related to the within-wafer uniformity are required.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Abstract: Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference.

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

Abstract: A wide workfunction (/spl Phi//sub m/) tuning range from 4.29eV to 4.99eV using total silicidation of doped polysilicon gate with nickel is presented. As, B and P but also N, Ge, Sb, In and co-implants, have been investigated to modulate the NiSi gate workfunction by dopant pile up effect at the silicide/dielectric interface. For the first time, defectivity data on dual gate oxide are presented, in correlation with the activation annealing impact and back end of line (BEOL) thermal stress effects as well as thorough TEM observations.

Applications of 2D MXenes in energy conversion and storage systems

Abstract: Transition metal carbides and nitrides (MXenes), a family of two-dimensional (2D) inorganic compounds, are materials composed of a few atomic layers of transition metal carbides, nitrides, or carbonitrides. Ti3C2, the first 2D layered MXene, was isolated in 2011. This material, which is a layered bulk material analogous to graphite, was derived from its 3D phase, Ti3AlC2 MAX. Since then, material scientists have either determined or predicted the stable phases of >200 different MXenes based on combinations of various transition metals such as Ti, Mo, V, Cr, and their alloys with C and N. Extensive experimental and theoretical studies have shown their exciting potential for energy conversion and electrochemical storage. To this end, we comprehensively summarize the current advances in MXene research. We begin by reviewing the structure types and morphologies and their fabrication routes. The review then discusses the mechanical, electrical, optical, and electrochemical properties of MXenes. The focus then turns to their exciting potential in energy storage and conversion. Energy storage applications include electrodes in rechargeable lithium- and sodium-ion batteries, lithium-sulfur batteries, and supercapacitors. In terms of energy conversion, photocatalytic fuel production, such as hydrogen evolution from water splitting, and carbon dioxide reduction are presented. The potential of MXenes for the photocatalytic degradation of organic pollutants in water, such as dye waste, is also addressed, along with their promise as catalysts for ammonium synthesis from nitrogen. Finally, their application potential is summarized.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Abstract: Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Abstract: Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with A-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

Study on the surface energy of graphene by contact angle measurements.

Abstract: Because of the atomic thinness of graphene, its integration into a device will always involve its interaction with at least one supporting substrate, making the surface energy of graphene critical to its real-life applications. In the current paper, the contact angle of graphene synthesized by chemical vapor deposition (CVD) was monitored temporally after synthesis using water, diiodomethane, ethylene glycol, and glycerol. The surface energy was then calculated based on the contact angle data by the Fowkes, Owens–Wendt (extended Fowkes), and Neumann models. The surface energy of fresh CVD graphene grown on a copper substrate (G/Cu) immediately after synthesis was determined to be 62.2 ± 3.1 mJ/m2 (Fowkes), 53.0 ± 4.3 mJ/m2 (Owens–Wendt) and 63.8 ± 2.0 mJ/m2 (Neumann), which decreased to 45.6 ± 3.9, 37.5 ± 2.3, and 57.4 ± 2.1 mJ/m2, respectively, after 24 h of air exposure. The ellipsometry characterization indicates that the surface energy of G/Cu is affected by airborne hydrocarbon contamination. G/Cu ex...

Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

Abstract: The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.