M
Marco M. Furchi
Researcher at Vienna University of Technology
Publications - 37
Citations - 6030
Marco M. Furchi is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Graphene & Photodetector. The author has an hindex of 16, co-authored 37 publications receiving 4843 citations. Previous affiliations of Marco M. Furchi include Massachusetts Institute of Technology.
Papers
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Solar-energy conversion and light emission in an atomic monolayer p-n diode
TL;DR: A p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer is reported, which is presented as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtained light-power conversion and electroluminescence efficiencies of 0.5% and 0.1%, respectively.
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Photovoltaic effect in an electrically tunable van der Waals heterojunction.
TL;DR: A type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers and under appropriate gate bias an atomically thin diode is realized, which exhibits a photovoltaic effect.
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Microcavity-Integrated Graphene Photodetector
Marco M. Furchi,Alexander Urich,Andreas Pospischil,Govinda Lilley,Karl Unterrainer,Hermann Detz,Pavel Klang,Aaron Maxwell Andrews,Werner Schrenk,Gottfried Strasser,Thomas Mueller +10 more
TL;DR: In this paper, the authors demonstrate that by monolithically integrating graphene with a Fabry-Perot microcavity, the optical absorption is 26-fold enhanced, reaching values >60%.
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CMOS-compatible graphene photodetector covering all optical communication bands
Andreas Pospischil,Markus Humer,Marco M. Furchi,Dominic Bachmann,Romain Guider,Thomas Fromherz,Thomas Mueller +6 more
TL;DR: In this article, a CMOS-compatible photodetector based on graphene with multi-gigahertz operation ranging from the O-to U-band of telecommunication bands is demonstrated, highlighting the promise of graphene as a new material for integrated photonics.
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Mechanisms of Photoconductivity in Atomically Thin MoS2
TL;DR: In this paper, the photoconductivity of biased mono-and bilayer molybdenum disulfide field effect transistors was investigated and photovoltaic and photoconductive effects were identified.