M
Mario Lanza
Researcher at King Abdullah University of Science and Technology
Publications - 191
Citations - 6736
Mario Lanza is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Graphene & Conductive atomic force microscopy. The author has an hindex of 34, co-authored 158 publications receiving 4330 citations. Previous affiliations of Mario Lanza include Chinese Academy of Sciences & University of Applied Sciences Deggendorf.
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High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation
TL;DR: In this article, a metal-insulator-semiconductor photo-anode for photoelectrochemical (PEC) water oxidation in both aqueous potassium hydroxide (KOH, pH = 14) and aaqueous borate buffer (pH = 9.5) solutions is presented.
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
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Electronic synapses made of layered two-dimensional materials
Yuanyuan Shi,Yuanyuan Shi,Xianhu Liang,Bin Yuan,Victoria Chen,Haitong Li,Fei Hui,Zhouchangwan Yu,Fang Yuan,Fang Yuan,Eric Pop,H.-S. Philip Wong,Mario Lanza +12 more
TL;DR: It is shown that multilayer hexagonal boron nitride (h-BN) can be used as a resistive switching medium to fabricate high-performance electronic synapses, enabling the emulation of a range of synaptic-like behaviour, including both short- and long-term plasticity.
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A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope.
TL;DR: The status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.
Journal ArticleDOI
Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Chengbin Pan,Yanfeng Ji,Na Xiao,Fei Hui,Kechao Tang,Yuzheng Guo,Xiaoming Xie,Francesco Maria Puglisi,Luca Larcher,Enrique Miranda,Lanlan Jiang,Yuanyuan Shi,Ilia Valov,Paul C. McIntyre,Rainer Waser,Mario Lanza +15 more
Abstract: The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) is studied using different electrode materials, and a family of h-BN-based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold-type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 106, and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications.