Mark C. Johnson

Bio: Mark C. Johnson is an academic researcher from Purdue University. The author has contributed to research in topics: CMOS & Leakage (electronics). The author has an hindex of 10, co-authored 31 publications receiving 1682 citations. Previous affiliations of Mark C. Johnson include Rose-Hulman Institute of Technology.

Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks

Abstract: Low supply voltage requires the device threshold to be reduced in order to maintain performance. Due to the exponential relationship between leakage current and threshold voltage in the weak inversion region, leakage power can no longer be ignored. In this paper we present a technique to accurately estimate leakage power by accurately modeling the leakage current in transistor stacks. The standby leakage current model has been verified by IISPICE. We demonstrate that the dependence of leakage power on primary input combinations can be accounted for by this model. Based on our analysis we can determine good bounds for leakage power in the standby mode. As a by-product of this analysis, we can also determine the set of input vectors which can put the circuits in the low-power standby mode. Results on a large number of benchmarks indicate that proper input selection can reduce the standby leakage power by more than 50% for some circuits.

Design and optimization of dual-threshold circuits for low-voltage low-power applications

Abstract: Reduction in leakage power has become an important concern in low-voltage, low-power, and high-performance applications. In this paper, we use the dual-threshold technique to reduce leakage power by assigning a high-threshold voltage to some transistors in noncritical paths, and using low-threshold transistors in critical path(s). In order to achieve the best leakage power saving under target performance constraints, an algorithm is presented for selecting and assigning an optimal high-threshold voltage. A general leakage current model which has been verified by HSPICE simulations is used to estimate leakage power. Results show that the dual-threshold technique is good for leakage power reduction during both standby and active modes. For some ISCAS benchmark circuits, the leakage power can be reduced by more than 80%. The total active power saving can be around 50% and 20% at low- and high-switching activities, respectively.

Design and optimization of low voltage high performance dual threshold CMOS circuits

Abstract: Reduction in leakage power has become an important concern in low voltage, low power and high performance applications. In this paper, we use dual threshold technique to reduce leakage power by assigning high threshold voltage to some transistors in non-critical paths, and using low-threshold transistors in critical paths. In order to achieve the best leakage power saving under target performance constraints, an algorithm is presented for selecting and assigning an optimal high threshold voltage. A general standby leakage current model which has been verified by IISPICE is used to estimate standby leakage power. Results show that dual threshold technique is good for power reduction during both standby and active modes. The standby leakage power savings for some ISCAS benchmarks can be more than 50%.

Leakage control with efficient use of transistor stacks in single threshold CMOS

Abstract: The state dependence of leakage can be exploited to obtain modest leakage savings in complementary metal-oxide-semiconductor (CMOS) circuits. However, one can modify circuits considering state dependence and achieve larger savings. We identify a low-leakage state and insert leakage-control transistors only where needed. Leakage levels are on the order of 35% to 90% lower than those obtained by state dependence alone. Using a modified standard-cell-design flow, area overhead for combinational logic was found to be on the order of 18%. The proposed technique minimizes performance impact, does not require multiple-threshold voltages, and supports a standard-cell-design flow.

Models and algorithms for bounds on leakage in CMOS circuits

Abstract: Subthreshold leakage current in deep submicron MOS transistors is becoming a significant contributor to power dissipation in CMOS circuits as threshold voltages and channel lengths are reduced. Consequently, estimation of leakage current and identification of minimum and maximum leakage conditions are becoming important, especially in low power applications. In this paper we outline methods for estimating leakage at the circuit level and then propose heuristic and exact algorithms to accomplish the same task for random combinational logic. In most cases the heuristic is found to obtain bounds on leakage that are close and often identical to bounds determined by a complete branch and bound search. Methods are also demonstrated to show how estimation accuracy can be traded off against execution time. The proposed algorithms have potential application in power management applications or quiescent current (I/sub D/DQ) testing if one wished to control leakage by application of appropriate input vectors. For a variety of benchmark circuits, leakage was found to vary by as much as a factor of six over the space of possible input vectors.

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Abstract: High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices. Finally, the paper explores different circuit techniques to reduce the leakage power consumption.

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Voltage scheduling problem for dynamically variable voltage processors

Abstract: This paper presents a model of dynamically variable voltage processors and basic theorems for power-delay optimization. A static voltage scheduling problem is also proposed and formulated as an integer linear programming (ILP) problem. In the problem, we assume that a core processor can vary its supply voltage dynamically, but can use only a single voltage level at a time. For a given application program and a dynamically variable voltage processor, a voltage scheduling which minimizes energy consumption under an execution time constraint can be found.

Gated-V/sub dd/: a circuit technique to reduce leakage in deep-submicron cache memories

Abstract: Deep-submicron CMOS designs have resulted in large leakage energy dissipation in microprocessors. While SRAM cells in on-chip cache memories always contribute to this leakage, there is a large variability in active cell usage both within and across applications. This paper explores an integrated architectural and circuit-level approach to reducing leakage energy dissipation in instruction caches. We propose, gated-V/sub dd/, a circuit-level technique to gate the supply voltage and reduce leakage in unused SRAM cells. Our results indicate that gated-V/sub dd/ together with a novel resizable cache architecture reduces energy-delay by 62% with minimal impact on performance.

Cache decay: exploiting generational behavior to reduce cache leakage power

Abstract: Power dissipation is increasingly important in CPUs ranging from those intended for mobile use, all the way up to high-performance processors for high-end servers. While the bulk of the power dissipated is dynamic switching power, leakage power is also beginning to be a concern. Chipmakers expect that in future chip generations, leakage's proportion of total chip power will increase significantly.This paper examines methods for reducing leakage power within the cache memories of the CPU. Because caches comprise much of a CPU chip's area and transistor counts, they are reasonable targets for attacking leakage. We discuss policies and implementations for reducing cache leakage by invalidating and “turning off” cache lines when they hold data not likely to be reused. In particular, our approach is targeted at the generational nature of cache line usage. That is, cache lines typically have a flurry of frequent use when first brought into the cache, and then have a period of “dead time” before they are evicted. By devising effective, low-power ways of deducing dead time, our results show that in many cases we can reduce LI cache leakage energy by 4x in SPEC2000 applications without impacting performance. Because our decay-based techniques have notions of competitive on-line algorithms at their roots, their energy usage can be theoretically bounded at within a factor of two of the optimal oracle-based policy. We also examine adaptive decay-based policies that make energy-minimizing policy choices on a per-application basis by choosing appropriate decay intervals individually for each cache line. Our proposed adaptive policies effectively reduce LI cache leakage energy by 5x for the SPEC2000 with only negligible degradations in performance.