There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

http://science.sciencemag.org/content/sci/294/5546/1488.full.pdf

Spintronics: a spin-based electronics vision for the future.

I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

The ultimate aim of any detection method is to achieve such a level of sensitivity that individual quanta of a measured entity can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity1, 2, 3, 4. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects5, which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here, we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphene's surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required.

/pdf/detection-of-individual-gas-molecules-adsorbed-on-graphene-2b3viubc4o.pdf

Detection of individual gas molecules adsorbed on graphene

A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.

/pdf/multiferroic-and-magnetoelectric-materials-2fpof7uzog.pdf

Multiferroic and magnetoelectric materials

Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents Doping of 2at% Ti4+ ions increased the dc resistivity by more than three orders of magnitude In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude Current–voltage (I–V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant

Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3

Wang et al recently reported multiferroic behavior, with ferromagnetic and ferroelectric polarizations that are both large at room temperature, in thin strained films of BiFeO3 (BFO). Although at room temperature, bulk BFO is ferroelectric and anti-ferromagnetic , Wang et al. reported that a 70-nm film shows both an enhanced ferroelectric polarization (90 μC cm–2) and a substantial magnetization (1 μB/Fe). This remains the only report of a robust room-temperature multiferroic and suggests the potential for novel devices that exploit the anticipated strain-mediated magnetoelectric coupling between the two ordered ground states. In this Comment, we argue that epitaxial strain does not enhance the magnetization and polarization in BiFeO3

https://science.sciencemag.org/content/sci/307/5713/1203.1.full.pdf

Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures".

The superconductor-ferromagnet proximity effect describes the fast decay of a spin-singlet supercurrent originating from the superconductor upon entering the neighboring ferromagnet. After placing a conical magnet (holmium) at the interface between the two, we detected a long-ranged supercurrent in the ferromagnetic layer. The long-range effect required particular thicknesses of the spiral magnetically ordered holmium, consistent with spin-triplet proximity theory. This enabled control of the electron pairing symmetry by tuning the degree of magnetic inhomogeneity through the thicknesses of the holmium injectors.

https://science.sciencemag.org/content/sci/329/5987/59.full.pdf

Controlled Injection of Spin-Triplet Supercurrents into a Strong Ferromagnet

A number of different compounds, such as those derived from LaMnO3, have recently been shown to exhibit very large changes (up to 106%) in electrical resistance when a magnetic field is applied1–4—a phenomenon known as colossal magnetoresistance (CMR). But magnetic fields of several tesla are typically required to obtain such a large magnetoresistive effect, thus limiting the potential for applications. Nevertheless the complex and intimate link between magnetic structure, crystallographic structure and electrical resistivity in CMR materials, in addition to being of fundamental scientific interest, appears to provide some scope for engineering a more sensitive magnetoresistive response. Here we elucidate the effect of specific structural defects on the CMR behaviour of the compound La0.7Ca0.3MnO3. We have made thin film devices that isolate the contribution of a single grain boundary that was introduced into an epitaxial film of the material by growing it on a bicrystal substrate. These devices display sharp resistance switching in magnetic fields orders of magnitude less than those normally associated with CMR. These results both provide insight into the role of grain boundaries, and demonstrate the potential for developing sub-micrometre magnetic field sensors based on the CMR effect.

Mark G. Blamire

Papers

Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3

Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures".

Controlled Injection of Spin-Triplet Supercurrents into a Strong Ferromagnet

Large Low-Field Magnetoresistance in La0.7Ca0.3Mno3 Induced by Artificial Grain-Boundaries

Large Electric Polarization and Exchange Bias in Multiferroic BiFeO3