M
Mark Lundstrom
Researcher at Purdue University
Publications - 482
Citations - 30541
Mark Lundstrom is an academic researcher from Purdue University. The author has contributed to research in topics: Ballistic conduction & Field-effect transistor. The author has an hindex of 81, co-authored 477 publications receiving 28962 citations. Previous affiliations of Mark Lundstrom include University of Minnesota & Queen's University.
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Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Book
Fundamentals of carrier transport
TL;DR: The fundamental principles of carrier transport in semiconductors and semiconductor devices are discussed in this article, which is an accessible introduction to the behavior of charged carriers in semiconductor and semiconductor devices.
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High-κ dielectrics for advanced carbon- nanotube transistors and logic gates
Ali Javey,Hyoungsub Kim,Markus Brink,Qian Wang,Ant Ural,Jing Guo,Paul C. McIntyre,Paul L. McEuen,Mark Lundstrom,Hongjie Dai +9 more
TL;DR: In this article, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field effect transistors.
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Theory of ballistic nanotransistors
TL;DR: In this paper, numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors, and the model reduces to Natori's theory of the ballistic MOSFET.
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Sub-10 nm carbon nanotube transistor.
Aaron D. Franklin,Mathieu Luisier,Shu-Jen Han,George S. Tulevski,Chris Breslin,Lynne Gignac,Mark Lundstrom,Wilfried Haensch +7 more
TL;DR: This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected and should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration.