M
Mark Ming-Cheng Cheng
Researcher at Wayne State University
Publications - 91
Citations - 5095
Mark Ming-Cheng Cheng is an academic researcher from Wayne State University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 29, co-authored 88 publications receiving 4448 citations. Previous affiliations of Mark Ming-Cheng Cheng include Ohio State University & University of Texas Health Science Center at Houston.
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Journal ArticleDOI
Mesoporous silicon particles as a multistage delivery system for imaging and therapeutic applications
Ennio Tasciotti,Xuewu Liu,Rohan Bhavane,Kevin D. Plant,Ashley D. Leonard,B. Katherine Price,Mark Ming-Cheng Cheng,Paolo Decuzzi,James M. Tour,Fredika M. Robertson,Mauro Ferrari,Mauro Ferrari,Mauro Ferrari +12 more
TL;DR: A multistage delivery system that can carry, release over time and deliver two types of nanoparticles into primary endothelial cells is shown, based on biodegradable and biocompatible mesoporous silicon particles that have well-controlled shapes, sizes and pores.
Journal ArticleDOI
Carbon dioxide gas sensor using a graphene sheet
TL;DR: In this article, a high-performance graphene carbon dioxide (CO2) gas sensor fabricated by mechanical cleavage is presented, which can be operated under ambient conditions and at room temperature.
Journal ArticleDOI
Nanotechnologies for biomolecular detection and medical diagnostics
Mark Ming-Cheng Cheng,Giovanni Cuda,Yuri Bunimovich,Marco Gaspari,James R. Heath,Haley D. Hill,Chad A. Mirkin,A. Jasper Nijdam,Rosa Terracciano,Thomas Thundat,Mauro Ferrari +10 more
TL;DR: The emerging approaches reviewed in this article, with reference to their diagnostic potential, include nanotextured surfaces for proteomics, a two-particle sandwich assay for the biological amplification of low-concentration biomolecular signals, and silicon-based nanostructures for the transduction of molecular binding into electrical and mechanical signals.
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High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Hsun-Jen Chuang,Xuebin Tan,Nirmal Ghimire,Meeghage Madusanka Perera,Bhim Chamlagain,Mark Ming-Cheng Cheng,Jiaqiang Yan,David Mandrus,David Tománek,Zhixian Zhou +9 more
TL;DR: The fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts is reported, indicating the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible, and transparent low-resistance ohmic contacts to a wide range of quasi-2D semiconductors.
Journal ArticleDOI
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera,Ming-Wei Lin,Hsun-Jen Chuang,Bhim Chamlagain,Chongyu Wang,Xuebin Tan,Mark Ming-Cheng Cheng,David Tománek,Zhixian Zhou +8 more
TL;DR: The fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2 with observed performance enhancement to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer is reported.