scispace - formally typeset
Search or ask a question
Author

Marko Mikuž

Other affiliations: University of Ljubljana
Bio: Marko Mikuž is an academic researcher from Jožef Stefan Institute. The author has contributed to research in topics: Detector & Diamond. The author has an hindex of 18, co-authored 62 publications receiving 1035 citations. Previous affiliations of Marko Mikuž include University of Ljubljana.


Papers
More filters
Journal ArticleDOI
TL;DR: Low Gain Avalanche Detectors (LGADs) as discussed by the authors are based on a n++-p+-p structure where appropriate doping of multiplication layer (p^+) is needed to achieve high fields and impact ionization.
Abstract: Novel silicon detectors with charge gain were designed (Low Gain Avalanche Detectors - LGAD) to be used in particle physics experiments, medical and timing applications. They are based on a n++-p+-p structure where appropriate doping of multiplication layer (p^+) is needed to achieve high fields and impact ionization. Several wafers were processed with different junction parameters resulting in gains of up to 16 at high voltages. In order to study radiation hardness of LGAD, which is one of key requirements for future high energy experiments, several sets of diodes were irradiated with reactor neutrons, 192 MeV pions and 800 MeV protons to the equivalent fluences of up to Φeq=1016 cm−2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. It was found that the gain decreases with irradiation, which was attributed to effective acceptor removal in the multiplication layer. Other important aspects of operation of irradiated detectors such as leakage current and noise in the presence of charge multiplication were also investigated.

108 citations

Journal ArticleDOI
TL;DR: In this paper, measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors are reported, which are n-on-p sensors with internal charge multiplication due to the presence of a thin, low resistivity diffusion layer below the junction, obtained with a highly doped implant.
Abstract: We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We have performed several beam tests with LGAD of different gain and report the measured timing resolution, comparing it with laser injection and simulations. For the 300 μm thick LGAD, the timing resolution measured at test beams is 120 ps while it is 57 ps for IR laser, in agreement with simulations using Weightfield2. For the development of thin sensors and their readout electronics, we focused on the understanding of the pulse shapes and point out the pivotal role the sensor capacitance plays.

73 citations

Journal ArticleDOI
Georges Aad1, Brad Abbott2, Jalal Abdallah3, Ovsat Abdinov4  +2852 moreInstitutions (207)
TL;DR: In this article, the cross-section for the production of a single top quark in association with a W boson in proton-proton collisions at is measured and the dataset corresponds to an integrated luminosity of 20.3 fb(-...
Abstract: The cross-section for the production of a single top quark in association with a W boson in proton-proton collisions at is measured. The dataset corresponds to an integrated luminosity of 20.3 fb(- ...

63 citations

Journal ArticleDOI
TL;DR: In this article, the charge collection efficiency of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light.
Abstract: The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2×10 15 n/cm 2 yields a MIP signal of at least 15000 e − both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The “Lazarus effect” was thus shown to extend to fluences at least ten times higher than was previously studied.

53 citations

Journal ArticleDOI
Georges Aad1, Brad Abbott2, Jalal Abdallah3, S. Abdel Khalek4  +2864 moreInstitutions (169)
TL;DR: In this article, the authors measured the top quark pair (t (t) over tilde) production cross-section sigma(t(t)) over bar with the ATLAS experiment at the LHC, with an opposite-charge e mu pair in the final state.
Abstract: The inclusive top quark pair (t (t) over tilde) production cross-section sigma(t (t) over bar) has been measured in proton-proton collisions at root s = 7 TeV and root s = 8 TeV with the ATLAS experiment at the LHC, using t (t) over bar events with an opposite-charge e mu pair in the final state. The measurement was performed with the 2011 7 TeV dataset corresponding to an integrated luminosity of 4.6 fb(-1) and the 2012 8 TeV dataset of 20.3 fb(-1). The numbers of events with exactly one and exactly two b-tagged jets were counted and used to simultaneously determine sigma(t (t) over bar) and the efficiency to reconstruct and b-tag a jet from a top quark decay, thereby minimising the associated systematic uncertainties. The cross-section was measured to be: sigma(t (t) over bar) = 182.9 +/- 3.1 +/- 4.2 +/- 3.6 +/- 3.3 pb (root s = 7 TeV) and sigma(t (t) over bar) = 242.4 +/- 1.7 +/- 5.5 +/- 7.5 +/- 4.2 pb (root s = 8 TeV), where the four uncertainties arise from data statistics, experimental and theoretical systematic effects, knowledge of the integrated luminosity and of the LHC beam energy. The results are consistent with recent theoretical QCD calculations at next-to-next-to-leading order. Fiducial measurements corresponding to the experimental acceptance of the leptons are also reported, together with the ratio of cross-sections measured at the two centre-of-mass energies. The inclusive cross-section results were used to determine the top quark pole mass via the dependence of the theoretically predicted cross-section on m(t)(pole) giving a result of m(t)(pole) = 172.9(-2.6)(+2.5) GeV. By looking for an excess of t (t) over bar production with respect to the QCD prediction, the results were also used to place limits on the pair-production of supersymmetric top squarks (t) over tilde (1) with masses close to the top quarkmass, decaying via (t) over tilde (1) -> t (chi) over tilde (0)(1) 1 to predominantly right-handed top quarks and a light neutralino (chi) over tilde (0)(1) 1, the lightest supersymmetric particle. Top squarks with masses between the top quark mass and 177 GeV are excluded at the 95% confidence level.

47 citations


Cited by
More filters
Journal ArticleDOI

[...]

08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

Journal Article
TL;DR: In this paper, the ATLAS experiment is described as installed in i ts experimental cavern at point 1 at CERN and a brief overview of the expec ted performance of the detector is given.
Abstract: This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.

2,798 citations

Journal ArticleDOI
Georges Aad1, M. Ackers2, F. Alberti, M. Aleppo3  +264 moreInstitutions (18)
TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

709 citations

Journal ArticleDOI
TL;DR: In this article, the authors review the challenges that have been overcome in developing EFT methods for LHC studies, and discuss the developing SMEFT and HEFT approaches that are consistent versions of such EFTs, systematically improvable with higher order corrections, and comment on the pseudo-observable approach.

370 citations

Journal ArticleDOI
TL;DR: In this paper, the authors introduce a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD), which is based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications.
Abstract: This paper introduces a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain requested to detect high energy charged particles, and the possibility to have fine segmentation pitches: this allows fabrication of microstrip or pixel devices which do not suffer from the limitations normally found [1] in avalanche detectors. In addition, a moderate multiplication value will allow the fabrication of thinner devices with the same output signal of standard thick substrates. The investigation of these detectors provides important indications on the ability of such modified electrode geometry to control and optimize the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated silicon detectors, at reasonable bias voltage, compatible with the voltage feed limitation of the CERN High Luminosity Large Hadron Collider (HL-LHC) experiments [2] . For instance, the inner most pixel detector layers of the ATLAS tracker will be exposed to fluences up to 2×10 16 1 MeV n eq /cm 2 , while for the inner strip detector region fluences of 1×10 15 n eq /cm 2 are expected. The gain implemented in the non-irradiated devices must retain some effect also after irradiation, with a higher multiplication factor with respect to standard structures, in order to be used in harsh environments such those expected at collider experiments.

295 citations