Markus Janousch

Bio: Markus Janousch is an academic researcher from Paul Scherrer Institute. The author has contributed to research in topics: Absorption spectroscopy & Beamline. The author has an hindex of 31, co-authored 73 publications receiving 3391 citations. Previous affiliations of Markus Janousch include Yale University & ETH Zurich.

Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory

Abstract: A high density of oxygen vacancies has been found in an experiment to determine the path of electrical conduction in Cr-doped SrTiO3 memory cells. The Cr acts as a seed for the localization of oxygen vacancies, leading to a statistically homogeneous distribution of charge carriers within the path. This warrants a controllable doping profile and improved device scaling down to the nanometer scale. The combination of laterally resolved micro-X-ray absorption spectroscopy and thermal imaging concludes that the resistance switching in Cr-doped SrTiO3 originates from an oxygen-vacancy drift to/from the electrode that was used as anode during the conditioning process. The experiments shows that this oxygen vacancy concept is crucial for the entire class of transition-metal-oxide-based bipolar resistance-change memory.

SwissFEL: The Swiss X-ray Free Electron Laser

Abstract: The SwissFEL X-ray Free Electron Laser (XFEL) facility started construction at the Paul Scherrer Institute (Villigen, Switzerland) in 2013 and will be ready to accept its first users in 2018 on the Aramis hard X-ray branch. In the following sections we will summarize the various aspects of the project, including the design of the soft and hard X-ray branches of the accelerator, the results of SwissFEL performance simulations, details of the photon beamlines and experimental stations, and our first commissioning results.

High precision measurements of the ground state hyperfine structure interval of muonium and of the muon magnetic moment

Abstract: High precision measurements of two Zeeman hyperfine transitions in the ground state of muonium in a strong magnetic field have been made at LAMPF using microwave magnetic resonance spectroscopy and a resonance line narrowing technique. These determine the most precise values of the ground state hyperfine structure interval of muonium $\ensuremath{\Delta}\ensuremath{ u}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}4463302765(53)\mathrm{Hz}$ $(12\mathrm{ppb})$, and of the ratio of magnetic moments ${\ensuremath{\mu}}_{\ensuremath{\mu}}/{\ensuremath{\mu}}_{p}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}3.18334513(39)$ $(120\mathrm{ppb})$, representing a factor of 3 improvement. Values of the mass ratio ${m}_{\ensuremath{\mu}}/{m}_{e}$ and the fine structure constant $\ensuremath{\alpha}$ are derived from these results.

LUCIA, a microfocus soft XAS beamline

Abstract: The beamline “LUCIA” (line for ultimate characterization by imaging and absorption) is a “tender” (0.8–8 keV) X-ray microprobe with capabilities for chemical speciation by micro-X-ray absorption spectroscopy (μ-XAS) and for elemental mapping by X-ray micro-fluorescence (μ-XRF). It allows the possibility to study heterogeneous samples at a micrometer scale and to combine these two element-specific and non-destructive techniques. A monochromatic beam of a few micrometer in size is incident on a sample which is mounted on a scanning x–y–z stage. μ-XRF shows the location of the elements, their relative abundances, and their association with other elements. One can take advantage of the monochromatic beam which allows separating out different elements by their absorption edges. After mapping the fluorescence, spots of interest can be analysed by XAS to determine the speciation (local chemistry, quantitative determination of the local geometric structure around the absorbing atom) of the elements and how they depend on the different components. Installed at first at the SLS of the Paul Scherrer Institute (Switzerland), the LUCIA beamline will be transferred to SOLEIL by the beginning of 2008. The energy range offered by the beamline corresponds to the best performances of SLS and SOLEIL in terms of brightness. It allows XAS experiments at the K edge of elements ranging from Na to Fe, L edges from Ni to Gd, and M edges of rare earths and actinides.

In Situ XAS and XRPD Parametric Rietveld Refinement To Understand Dealumination of Y Zeolite Catalyst

Abstract: Dealumination of NH4−Y zeolite during steaming to 873 K was investigated with in situ, time-dependent, synchrotron radiation XRPD and in situ Al K-edge XAS. Water desorption is complete at 450 K, and ammonium decomposition occurs between 500 and 550 K. Only a small fraction of Al3+ species (5%) leaves the framework during heating from 710 to 873 K; these species occupy site I′ inside the sodalite cage. This fraction increases up to 8% in the first 50 min at 873 K and remains constant for the following 70 min isotherm and during the high-temperature part of the cooling experiment. During cooling from 500 to 450 K, the electron density at site I′ increases suddenly, corresponding to a fraction of 30−35% of the total Al, confirmed by ex situ 27Al MAS solid-state NMR. At that temperature, in situ Al K-edge XAS indicates a change in Al coordination of a large fraction of Al, and thermogravimetric (TG) data show the first water molecules start to repopulate the pores. Such molecules drive the dislodgment of mos...

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Nanoionics-based resistive switching memories

Abstract: Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

Memristive devices for computing

Abstract: Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

CODATA Recommended Values of the Fundamental Physical Constants: 2006

Abstract: This paper gives the 2010 self-consistent set of values of the basic constants and conversion factors of physics and chemistry recommended by the Committee on Data for Science and Technology (CODATA) for international use. The 2010 adjustment takes into account the data considered in the 2006 adjustment as well as the data that became available from 1 January 2007, after the closing date of that adjustment, until 31 December 2010, the closing date of the new adjustment. Further, it describes in detail the adjustment of the values of the constants, including the selection of the final set of input data based on the results of least-squares analyses. The 2010 set replaces the previously recommended 2006 CODATA set and may also be found on the World Wide Web at physics.nist.gov/constants.