Author
Martin Edward Ryan
Bio: Martin Edward Ryan is an academic researcher from Durham University. The author has contributed to research in topics: Etching (microfabrication) & Reactive-ion etching. The author has an hindex of 6, co-authored 9 publications receiving 402 citations.
Papers
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Patent•
28 Jul 1997
TL;DR: In this article, a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition is described.
Abstract: This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.
250 citations
TL;DR: In this paper, the chemical character of the resulting fluoropolymer deposits is found to be strongly influenced by the type of carrier gas employed, and the chemical properties of the resultant fluoropolymers are analyzed using X-ray photoelectron spectroscopy.
Abstract: Plasma polymerization of sputtered poly(tetrafluoroethy1ene) (F'TFE) using nonequilibrium helium, neon, argon, nitrogen, and hydrogen glow discharges has been followed by X-ray photoelectron spectroscopy ( X P S ) , infrared spectroscopy, and UV emission spectroscopy. The chemical character of the resultant fluoropolymer deposits is found to be strongly influenced by the type of carrier gas employed.
76 citations
Patent•
28 Jul 1997
TL;DR: In this article, a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition is described.
Abstract: of EP0822582This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.
27 citations
TL;DR: In this paper, the variation in plasma polymer stoichiometry and the extent of monomer fragmentation were found to be critically dependent upon the electrical discharge power, and the effect of the discharge power on the variation of the polymer was investigated.
Abstract: Continuous wave rf plasma polymerization of 2-iodothiophene has been studied using X-ray photoelectron spectroscopy (XPS), X-ray absorption near-edge spectroscopy (XANES), and Fourier transform infrared spectroscopy (FTIR). The variation in plasma polymer stoichiometry and the extent of monomer fragmentation are found to be critically dependent upon the electrical discharge power.
21 citations
Patent•
29 May 1998
TL;DR: In this article, the side wall shape and surface roughness was improved by bombarding a base with a plasma in a vacuum chamber and introducing a hydrocarbon depositing gas to deposit a C or hydrocarbon layer.
Abstract: PROBLEM TO BE SOLVED: To improve the side wall shape and surface roughness thereon by bombarding a base with a plasma in a vacuum chamber and introducing a hydrocarbon depositing gas to deposit a C or hydrocarbon layer. SOLUTION: A vacuum chamber 11 contains a support electrode 12 for receiving a semiconductor wafer 13 and electrode 14 combined with it apart therefrom and is surrounded with a coil 15a connected to an r-f power source 16 for inducing a plasma between the electrodes 12, 14 in the chamber 11. The microwave output is used alternatively for causing a plasma. A hydrocarbon film formed by a passivation has important merits, e.g. it can be quickly removed after the etching is completed with a dry ashing (O plasma) treatment.
15 citations
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Patent•
07 Apr 2005
TL;DR: In this article, a method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS devices from contamination, physical contact, or other deleterious external events.
Abstract: A method for forming a MEMS device is disclosed, where a final release step is performed just prior to a wafer bonding step to protect the MEMS device from contamination, physical contact, or other deleterious external events. Without additional changes to the MEMS structure between release and wafer bonding and singulation, except for an optional stiction treatment, the MEMS device is best protected and overall process flow is improved. The method is applicable to the production of any MEMS device and is particularly beneficial in the making of fragile micromirrors.
391 citations
TL;DR: CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents.
Abstract: Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed.
352 citations
TL;DR: A review on macromolecular plasma chemistry illustrates the continuing interest in achieving controlled surface modification under plasma conditions, and the potential of plasma-chemistry for advancing future technologies.
347 citations
TL;DR: In this paper, the combined effect of low surface energy and substrate roughness was found to underpin the observed liquid repellency behavior, leading to the formation of hard super-hydrophobic surfaces.
Abstract: Plasma fluorination followed by cross-linking of polybutadiene films gives rise to the formation of hard super-hydrophobic surfaces. The combined effect of low surface energy and substrate roughness is found to underpin the observed liquid repellency behavior.
342 citations
Patent•
20 May 2010
TL;DR: In this paper, a plasmas processing apparatus consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber is etched with plasma generated by supplying high frequency power to the electrode disposed in a sample holder, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
Abstract: A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
209 citations