Martin Eickhoff

TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter

TL;DR: In this article, the performance of three distinctly different phases, Cu2O, Cu4O3, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper.

TL;DR: In this paper, the pH-sensitivity of GaN surfaces in electrolyte solutions has been determined, showing that the native metal oxide on the III-nitride surface is responsible for pH sensitivity.

TL;DR: In this paper, a summary of the main results and conclusions achieved in the DISS (Direct Solar Steam) project is presented, where the feasibility of the DSG process in horizontal parabolic trough collectors has been proven and an important know how has been acquired by the project partners regarding the thermo-hydraulic parameters of the water/steam flow in DSG solar fields.

TL;DR: In this paper, the influence of GaN crystal polarity on various properties of epitaxial films and electronic devices is discussed. But the authors focus on the Ga-face polarity.