Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.

Materials for terahertz science and technology

Physical Review B

Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium arsenide, and germanium. For sapphire and quartz, the measured absorptions are consistent with the earlier work below 0.5 THz. Above 1 THz we measure significantly more absorption for sapphire, while for quartz our values are in reasonable agreement with those of the previous work. Our results on high-purity fused silica are consistent with those on the most transparent fused silica measured to date. For the semiconductors, we show that many of the previous measurements on silicon were dominated by the effects of carriers due to impurities. For high-resistivity, 10-kΩ cm silicon, we measure a remarkable transparency together with an exceptionally nondispersive index of refraction. For GaAs our measurements extend the precision of the previous work, and we resolve two weak absorption features at 0.4 and 0.7 THz. Our measurements on germanium demonstrate the dominant role of intrinsic carriers; the measured absorption and dispersion are well fitted by the simple Drude theory.

/pdf/far-infrared-time-domain-spectroscopy-with-terahertz-beams-4mldfzx2yy.pdf

Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors

Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.

Active terahertz metamaterial devices

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

We describe the application of a new high-brightness, terahertz-beam system to time-domain spectroscopy. By analyzing the propagation of terahertz electromagnetic pulses through water vapor, we have made what we believe are the most accurate measurements to date of the absorption cross sections of the water molecule for the nine strongest lines in the frequency range from 0.2 to 1.45 THz.

Terahertz time-domain spectroscopy of water vapor.

Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N‐ and P‐type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency‐dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.

/pdf/optical-and-electronic-properties-of-doped-silicon-from-0-1-1xrf4whpar.pdf

Optical and electronic properties of doped silicon from 0.1 to 2 THz

We have significantly improved the emission and detection of electromagnetic beams of single‐cycle 0.5 THz pulses, through the use of new dipolar antenna structures. The frequency response was extended to well beyond 1 THz, and the beam power was increased by more than 15 times. The antennas were located at the foci of sapphire lenses and were photoconductively driven by ultrafast laser pulses. An additional collimation by a paraboloidal mirror produced a beam with a 25 mrad divergence, and subsequent focusing by a second identical mirror improved the coupling between the transmitting and receiving antenna by orders of magnitude.

/pdf/high-brightness-terahertz-beams-characterized-with-an-2zto9l319f.pdf

High‐brightness terahertz beams characterized with an ultrafast detector

A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with resistivities of 0.1, 1, and 10 \ensuremath{\Omega} cm in the submillimeter range of 0.1--2 THz. From the transmission measurements performed at room temperature and at 80 K, the absorption and dispersion, and concomitantly the full complex conductivity, of the doped silicon could be obtained. The results provide an accurate view on the dynamics of the electrons and the holes. Although the simple Drude model, with an energy-independent relaxation time, gives a surprisingly accurate description of the observed carrier dynamics, the measurements do show that some refinements are needed. An extended model, with an energy-dependent carrier-relaxation rate, can explain most of the observed deviations from the simple Drude model.

/pdf/carrier-dynamics-of-electrons-and-holes-in-moderately-doped-65aq15508c.pdf

Martin P. van Exter

Papers

Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors

Terahertz time-domain spectroscopy of water vapor.

Optical and electronic properties of doped silicon from 0.1 to 2 THz

High‐brightness terahertz beams characterized with an ultrafast detector

Carrier dynamics of electrons and holes in moderately doped silicon.