M
Martin Salinga
Researcher at RWTH Aachen University
Publications - 55
Citations - 5373
Martin Salinga is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Amorphous solid & Phase-change memory. The author has an hindex of 29, co-authored 53 publications receiving 4743 citations. Previous affiliations of Martin Salinga include University of Münster & IBM.
Papers
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Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Journal ArticleDOI
A map for phase-change materials.
Dominic Lencer,Martin Salinga,Blazej Grabowski,Tilmann Hickel,Jörg Neugebauer,Matthias Wuttig +5 more
TL;DR: A first treasure map for phase-change materials is presented on the basis of a fundamental understanding of the bonding characteristics, spanned by two coordinates that can be calculated just from the composition, and represent the degree of ionicity and the tendency towards hybridization ('covalency') of the bonded materials.
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Design Rules for Phase‐Change Materials in Data Storage Applications
TL;DR: It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates, providing a design rule for phase-change materials.
Journal ArticleDOI
Nanosecond switching in GeTe phase change memory cells
Gunnar Bruns,P. Merkelbach,C. Schlockermann,Martin Salinga,Matthias Wuttig,Thomas Happ,Jan Boris Philipp,Michael Kund +7 more
TL;DR: In this article, the electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments, and the minimum SET pulse duration can even be reduced down to 1 ns.
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Using low-loss phase-change materials for mid-infrared antenna resonance tuning.
Ann-Katrin U. Michel,Dmitry N. Chigrin,Tobias W. W. Maß,Kathrin Schönauer,Martin Salinga,Matthias Wuttig,Thomas Taubner +6 more
TL;DR: Tuning of the resonance frequency of aluminum nanoantennas is shown via variation of the refractive index n of a layer of phase-change material, which offers a huge index change upon the structural transition from the amorphous to the crystalline state.