Martina Werner

Bio: Martina Werner is an academic researcher from Max Planck Society. The author has contributed to research in topics: Potential induced degradation & Silicon. The author has an hindex of 15, co-authored 30 publications receiving 1194 citations.

Shunt Types in Crystalline Silicon Solar Cells

Abstract: Nine different types of shunt have been found in state-of-the-art mono- and multicrystalline solar cells by lock-in thermography and identified by SEM investigation (including EBIC), TEM and EDX. These shunts differ by the type of their I–V characteristics (linear or nonlinear) and by their physical origin. Six shunt types are process-induced, and three are caused by grown-in defects of the material. The most important process-induced shunts are residues of the emitter at the edge of the cells, cracks, recombination sites at the cell edge, Schottky-type shunts below grid lines, scratches, and aluminum particles at the surface. The material-induced shunts are strong recombination sites at grown-in defects (e.g., metal-decorated small-angle grain boundaries), grown-in macroscopic Si3N4 inclusions, and inversion layers caused by microscopic SiC precipitates on grain boundaries crossing the wafer. Copyright © 2004 John Wiley & Sons, Ltd.

The role of stacking faults for the formation of shunts during potential-induced degradation of crystalline Si solar cells

Abstract: Mono- and multicrystalline solar cells have been stressed by potential-induced degradation (PID). Cell pieces with PID-shunts are imaged by SEM using the EBIC technique in plan view as well as after FIB cross-section preparation. A linear shaped signature is found in plan-view EBIC images at every potential-induced shunt position on both mono- and multicrystalline solar cells. Cross-sectional SEM and TEM images reveal stacking faults in a {111} plane. Combined TEM/EDX measurements show that the stacking faults are strongly decorated with sodium. Thus, the electric conductivity of stacking faults is assumed to arise under the influence of sodium ion movement through a high electric field across the SiNx anti-reflective layer, resulting in PID. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Review of Failures of Photovoltaic Modules

Abstract: One key factor of reducing the costs of photovoltaic systems is to increase the reliability and the service life time of the PV modules. Today's statistics show degradation rates of the rated power for crystalline silicon PV modules of 0.8%/year Jordan11. To increase the reliability and the service life of PV modules one has to understand the challenges involved. For this reason, the international Task 13 expert team has summarized the literature as well as their knowledge and personal experiences on actual failures of PV modules. The target audience of this work is PV module designers, PV industry, engineering lines, test equipment developers, testing companies, technological research laboratories, standardisation committees, as well as national and regional planning authorities. In the first part, this document reports on the measurement methods which allow the identification and analysis of PV module failures. Currently, a great number of methods are available to characterise PV module failures outdoors and in labs. As well as using I-V characteristics as a diagnostic tool, we explain image based methods and visual inspection. For each method we explain the basis, indicate current best practice, and explain how to interpret the images. Three thermography methods are explained: thermography under steady state conditions, pulse thermography and lock-in thermography. The most commonly used of these methods is thermography under steady state conditions. Furthermore electroluminescence methods have become an increasingly popular standard lab approach for detecting failures in PV modules. 2A less common but easier to use method is UV fluorescence. This method can be used to detect module failures similar to those detected with thermography and electroluminescence techniques; however, the PV modules must be sited outdoors for at least one and a half years for the method to be effective. For visual documentation of module conditions in the field, we set up a standard which is now accepted and used by all authors documenting such tests. This standard format allows the documentation of visible module failures in standardised way and makes the data accessible for statistical evaluation. Furthermore we introduce a signal transition method for the detection of defective circuits in installed PV modules. All methods are linked to the PV module failures which are able to be found with these methods. In the second part, the most common failures of PV modules are described in detail. In particular these failures are: delamination, back sheet adhesion loss, junction box failure, frame breakage, EVA discolouration, cell cracks, snail tracks, burn marks, potential induced degradation, disconnected cell and string interconnect ribbons, defective bypass diodes; and special failures of thin-film modules, such as micro arcs at glued connectors, shunt hot spots, front glass breakage, and back contact degradation. Where possible, the origin of the failure is explained. A reference to the characterisation method is given to identify the failure. If available, statistics of the failure type in the field and from accelerating aging tests are shown. For each failure, a description of safety issues and the influence on the power loss is given, including typical follow-up failure modes. In the third part, new test methods are proposed for detection of PV module failures in the field. A special focus is made on mechanical tests because many problems have arisen in the last few years from the mechanical loading of modules. These mechanical loads occur during transportation and from snow loads on modules mounted on an incline. Furthermore, testing for UV degradation of PV modules, ammonia corrosion (sometimes found in roofs of stock breeding buildings) and potential induced degradation are described. The latter method caused some controversy within the international standardization committee until the finalization of this report because many alternative suggestions from different countries were proposed. The test methods are explained in detail, linked to failure descriptions and the results are compared to real failure occurrences, where possible. During a past Task 13 project phase, we recognised that the topic �3.2 Characterising and Classifying Failures of PV Modules� is an important on-going subject in the field of PV research. The current review of failure mechanisms shows that the origin and the power loss associated with some important PV module failures is not yet clear (e.g. snail tracks and cell cracks). There are also still some questions as to how best to test for some types of failure (e.g. potential induced degradation and cell cracks). Furthermore, despite the fact that a defective bypass diode or cell interconnect ribbon in a PV module may possibly lead to a fire, very little work has been done to detect these defects in an easy and reliable way once installed in a PV system. However, there are research groups currently working on those topics in order to overcome these challenges. Therefore, it is planed to continue our in-depth review of failures of photovoltaic modules in an extension of the TASK 13 project.

Phase segregation enhanced ion movement in efficient inorganic CsPbIBr2 solar cells

Abstract: Organic–inorganic hybrid perovskite solar cells with mixed cations and mixed halides have achieved impressive power conversion efficiency of up to 22.1%. Phase segregation due to the mixed compositions has attracted wide concerns, and their nature and origin are still unclear. Some very useful analytical techniques are controversial in microstructural and chemical analyses due to electron beam-induced damage to the “soft” hybrid perovskite materials. In this study photoluminescence, cathodoluminescence, and transmission electron microscopy are used to study charge carrier recombination and retrieve crystallographic and compositional information for all-inorganic CsPbIBr2 films on the nanoscale. It is found that under light and electron beam illumination, “iodide-rich” CsPbI(1+x)Br(2−x) phases form at grain boundaries as well as segregate as clusters inside the film. Phase segregation generates a high density of mobile ions moving along grain boundaries as ion migration “highways.” Finally, these mobile ions can pile up at the perovskite/TiO2 interface resulting in formation of larger injection barriers, hampering electron extraction and leading to strong current density–voltage hysteresis in the polycrystalline perovskite solar cells. This explains why the planar CsPbIBr2 solar cells exhibit significant hysteresis in efficiency measurements, showing an efficiency of up to 8.02% in the reverse scan and a reduced efficiency of 4.02% in the forward scan, and giving a stabilized efficiency of 6.07%.

Potential-induced degradation in photovoltaic modules: a critical review

Abstract: Potential-induced degradation (PID) has received considerable attention in recent years due to its detrimental impact on photovoltaic (PV) module performance under field conditions. Both crystalline silicon (c-Si) and thin-film PV modules are susceptible to PID. While extensive studies have already been conducted in this area, the understanding of the PID phenomena is still incomplete and it remains a major problem in the PV industry. Herein, a critical review of the available literature is given to serve as a one-stop source for understanding the current status of PID research. This paper also aims to provide an overview of future research paths to address PID-related issues. This paper consists of three parts. In the first part, the modelling of leakage current paths in the module package is discussed. The PID mechanisms in both c-Si and thin-film PV modules are also comprehensively reviewed. The second part summarizes various test methods to evaluate PV modules for PID. The last part focuses on studies related to PID in the omnipresent p-type c-Si PV modules. The dependence of temperature, humidity and voltage on the progression of PID is examined. Preventive measures against PID at the cell, module and system levels are illustrated. Moreover, PID recovery in standard p-type c-Si PV modules is also studied. Most of the findings from p-type c-Si PV modules are also applicable to other PV module technologies.

Shunt Types in Crystalline Silicon Solar Cells

Abstract: Nine different types of shunt have been found in state-of-the-art mono- and multicrystalline solar cells by lock-in thermography and identified by SEM investigation (including EBIC), TEM and EDX. These shunts differ by the type of their I–V characteristics (linear or nonlinear) and by their physical origin. Six shunt types are process-induced, and three are caused by grown-in defects of the material. The most important process-induced shunts are residues of the emitter at the edge of the cells, cracks, recombination sites at the cell edge, Schottky-type shunts below grid lines, scratches, and aluminum particles at the surface. The material-induced shunts are strong recombination sites at grown-in defects (e.g., metal-decorated small-angle grain boundaries), grown-in macroscopic Si3N4 inclusions, and inversion layers caused by microscopic SiC precipitates on grain boundaries crossing the wafer. Copyright © 2004 John Wiley & Sons, Ltd.