M
Masahito Kodama
Researcher at Toyota
Publications - 20
Citations - 526
Masahito Kodama is an academic researcher from Toyota. The author has contributed to research in topics: Trench & Breakdown voltage. The author has an hindex of 7, co-authored 20 publications receiving 490 citations.
Papers
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Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Journal ArticleDOI
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.
Patent
Semiconductor device including lateral MOS element
TL;DR: In this article, a semiconductor device including a lateral MOS element consisting of a p-type silicon substrate, a first semiconductor layer of an n-type constituting a drift region, a second semiconductor layers of the n- type selectively provided in the first layer, and constituting body region, in which a channel region is partially formed, a third semiconductor surface of the second layer selectively providing in the surface of second layer, forming a source region, and a drain region.
Journal ArticleDOI
A concept of SOI RESURF lateral devices with striped trench electrodes
TL;DR: In this paper, a concept of silicon-on-insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction was presented.
Patent
Insulated gate semiconductor device and fabrication method therefor
Tsutomu Uesugi,Masahito Kodama +1 more
TL;DR: In this article, the double-gate structure was used to reduce channel resistance, JFET resistance, and epitaxial resistance of the on-resistance of the power MOSFET, and implements an adequate breakdown voltage due to the effect of gate bias.