Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for emerging computing paradigms. Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models. We highlight the material- and device-level challenges involved in high-volume manufacturing in advanced technology nodes (≤10 nm), which are reminiscent of those encountered in the early days of high-K-metal-gate transistor development. We argue that the ferroelectric field-effect transistors can be a key hardware component in the future of computing, providing a new approach to electronics that we term ferroelectronics. This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.

The future of ferroelectric field-effect transistor technology

A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Method of manufacturing semiconductor device and substrate processing apparatus

ZnO nanorods doped with Ag and Sb have been synthesized by a facile hydrothermal technique. Crystal quality, morphology, chemical/electronic composition, local structure, and vibrational mode properties are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. Evidence of dopant incorporation is demonstrated in the XPS measurements of both Sb-doped and Ag-doped ZnO nanorods. From XRD data, it was found that the doped ZnO nanorods have a lower degree of crystallinity. The lattice constants of doped ZnO nanorods were slightly larger than that of the pure samples.

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Synthesis and Characterization of Ag- or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route

We review oxygen K-edge X-ray absorption spectra of both molecules and solids. We start with an overview of the main experimental aspects of oxygen K-edge X-ray absorption measurements including X-ray sources, monochromators, and detection schemes. Many recent oxygen K-edge studies combine X-ray absorption with time and spatially resolved measurements and/or operando conditions. The main theoretical and conceptual approximations for the simulation of oxygen K-edges are discussed in the Theory section. We subsequently discuss oxygen atoms and ions, binary molecules, water, and larger molecules containing oxygen, including biomolecular systems. The largest part of the review deals with the experimental results for solid oxides, starting from s- and p-electron oxides. Examples of theoretical simulations for these oxides are introduced in order to show how accurate a DFT description can be in the case of s and p electron overlap. We discuss the general analysis of the 3d transition metal oxides including discussions of the crystal field effect and the effects and trends in oxidation state and covalency. In addition to the general concepts, we give a systematic overview of the oxygen K-edges element by element, for the s-, p-, d-, and f-electron systems.

Oxygen K-edge X-ray Absorption Spectra

Purpose: Evaluation of the usefulness of MR imaging for diagnosing mediopatellar plica (MP) of the knee joint.Material and Methods: We prospectively examined MR images of 40 knee joints in 30 patie...

Mr Evaluation of Mediopatellar Plica

F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering Vth and improving NBTI in poly-Si gate pFET Mobility degradation is not accompanied and drive current is increased by 180% From analytical and electrical characterization, the Vth shift is attributed to change in trap density

Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET

We have investigated the changes of chemical bonding states of an H-terminated silicon surface under inert gas (Ar,N 2 ) and ultrahigh vacuum (UHV) annealing using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). SiC is formed (corresponding to ∼0.1 monolayer) under inert gas and UHV annealing at around 500°C, which is coincident with the temperature of the dangling bonds formation at the silicon surface by hydrogen desorption, whereas SiC is not formed under O 2 annealing. From the precise analysis using a combination of XPS and TDS, the SiC formation is related to the reaction between the silicon surface and the organic contamination that is unavoidably adsorbed during air exposure. We also studied the electrical properties of metal oxide semiconductor capacitors with a chemical vapor deposited silicon oxide gate insulator formed on Ar- and O 2 -annealed silicon surfaces. Ar preannealing increases the leakage current by approximately 10 - 4 times compared with O 2 annealing.

XPS Study of H-Terminated Silicon Surface under Inert Gas and UHV Annealing

The dopant (P and B) diffusion path in n- and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using atom probe tomography, based on the annealing time dependence of the dopant distribution at 900 °C. Remarkable differences were observed between P and B diffusion behavior. In the initial stage of diffusion, P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type polycrystalline-Si gate. With longer annealing times, segregation of P on the grain boundaries was observed; however, few P atoms were observed within the large grains or on the gate/gate oxide interface distant from grain boundaries. These results indicate that P atoms diffuse along grain boundaries much faster than through the bulk or along the gate/gate oxide interface. On the other hand, in the p-type polycrystalline-Si gate, segregation of B was observed only at the initial stage of diffusion. After f...

Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 °C after 250K program/erase cycles is confirmed for advanced automotive system applications.

Masao Inoue

Papers

Mr Evaluation of Mediopatellar Plica

Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET

XPS Study of H-Terminated Silicon Surface under Inert Gas and UHV Annealing

Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond