M
Masashi Kawasaki
Researcher at Global Alliance in Management Education
Publications - 891
Citations - 52515
Masashi Kawasaki is an academic researcher from Global Alliance in Management Education. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 98, co-authored 856 publications receiving 47863 citations. Previous affiliations of Masashi Kawasaki include Tokyo Institute of Technology & Toyama Prefectural University.
Papers
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Journal ArticleDOI
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
Yuji Matsumoto,Makoto Murakami,T. Shono,Tetsuya Hasegawa,Tomoteru Fukumura,Masashi Kawasaki,Parhat Ahmet,Toyohiro Chikyow,Shin-ya Koshihara,Hideomi Koinuma +9 more
TL;DR: The observation of transparent ferromagnetism in cobalt-doped anatase thin films with the concentration of cobalt between 0 and 8% is reported, indicating the existence of ferromagnetic long-range ordering.
Journal ArticleDOI
Emergent phenomena at oxide interfaces
TL;DR: Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces, with characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale.
Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
Journal ArticleDOI
Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
TL;DR: In this article, room-temperature ultraviolet (UV) laser emission of ZnO microcrystallite thin films is reported, which represents an important step towards the development of nanometer photoelectronics.
Patent
Semiconductor device, manufacturing method, and electronic device
TL;DR: In this paper, the authors proposed a thin-film transistor with an active layer made of polycrystalline zinc oxide (ZnO) to which a group V element is added.