Masis Mkrtchyan

TL;DR: In this article, a new theory for image blurring as a result of stochastic particle-particle interactions has been investigated for projection electron and ion-beam lithography systems.

TL;DR: In this article, an analytical model to calculate electron transmission through the mask membrane and image contrast due to different scattering properties of the patterned area and the membrane was developed, utilizing cross sections for electron elastic and inelastic scattering on an atom with exponentially screened Coulomb potential of the nucleus derived in the first Born approximation.

TL;DR: In this paper, the effects of space charge in charged particle projection lithography systems using a model they have previously developed were compared with experimental data for an ion projection system and predict the performance of electron and ion beam systems under development.

TL;DR: A SCALPEL\circledR (SCattering with Angular Limitation in Projection Electron-beam Lithography) proof-of-concept system, comprising a tool, a reticle and a resist, has been designed to address the critical issues that must be investigated to determine if this approach is viable as a practical lithographic technology as mentioned in this paper.

TL;DR: A proof-of-concept experimental lithography tool, based upon the SCALPELTM principle, is currently being fabricated at AT&T Bell Laboratories as discussed by the authors, which is the minimal configuration necessary to evaluate this specific printing technique, consistent with design rules from 0.18 to 0.09 micrometers.