Massimo Mazzillo

Bio: Massimo Mazzillo is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Silicon photomultiplier & Photodiode. The author has an hindex of 22, co-authored 142 publications receiving 1702 citations.

Silicon Photomultiplier Technology at STMicroelectronics

Abstract: In this paper we present the results of the first electrical and optical characterization performed on 1 mm2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution. These characteristics can be considered really promising in view of the final application of the photodetector in the Positron Emission Tomography (PET).

Highly Efficient Low Reverse Biased 4H-SiC Schottky Photodiodes for UV-Light Detection

Abstract: Ultraviolet light detection has a wide range of scientific and industrial applications. In particular, SiC photodiodes have been proposed because of their robustness even in harsh environments, high quantum efficiency but excellent visible blindness, very low dark current, and high speed. Here, we report on the electrical and optical performances of high efficient large area 4 H-SiC Schottky photodiodes working in the photovoltaic regime. We demonstrate that the high signal-to-noise ratio along with the low operating reverse voltage in spite of the large sensitive area makes them suitable in low power consumption applications requiring high sensitivity down to 250 nm.

Timing Performances of Large Area Silicon Photomultipliers Fabricated at STMicroelectronics

Abstract: In this paper the results of charge and timing resolution characterization realized at Fermi National Accelerator Laboratory (Fermilab) on 3.5 × 3.5 mm2 Silicon PhotoMultipliers fabricated at STMicroelectronics Catania R&D clean room facilities are presented. The device consists of 4900 microcells and has a geometrical fill factor of 36%. Timing measurements were realized at different wavelengths by varying the overvoltage and the temperature applied to the photodetector. The results shown in this manuscript demonstrate that the device, in spite of its large area, exhibits relevant features in terms of low dark current density, fast timing and very good single photoelectron resolution. All these characteristics can be considered very appealing in view of the utilization of this technology in applications requiring detectors with high timing and energy resolution performances.

Silicon planar technology for single-photon optical detectors

Abstract: In this paper we report the results relative to the design and fabrication of Single Photon Avalanche Detectors (SPAD) operating at low voltage in planar technology. These silicon sensors consist of pn junctions that are able to remain quiescent above the breakdown voltage until a photon is absorbed in the depletion volume. This event is detected through an avalanche current pulse. Device design and critical issues in the technology are discussed. Experimental test procedures are then described for dark-counting rate, afterpulsing probability, photon timing resolution, quantum detection efficiency. Through these experimental setups we have measured the electrical and optical performances of different SPAD technology generations. The results from these measurements indicate that in order to obtain low-noise detectors it is necessary to introduce a local gettering process and to realize the diode cathode through in situ doped polysilicon deposition. With such technology low noise detectors with dark counting rates at room temperature down to 10c/s for devices with 10mm diameter, down to 1kc/s for 50mm diameter have been obtained. Noticeable results have been obtained also as far as time jitter and quantum detection efficiency are concerned. This technology is suitable for monolithic integration of SPAD detectors and associated circuits. Small arrays have already been designed and fabricated. Preliminary results indicate that good dark count rate uniformity over the different array pixels has already been obtained.

Characterization of a Novel 100-Channel Silicon Photomultiplier—Part I: Noise

Abstract: In this paper, we present the results of the first noise characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon avalanche photodiode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured, as a function of the bias voltage and of the incident photon flux. A dedicated data-analysis procedure was developed that allows one to extract at once the relevant parameters and quantify the noise.

Statistical Parametric Mapping The Analysis Of Functional Brain Images

Abstract: Thank you very much for reading statistical parametric mapping the analysis of functional brain images. As you may know, people have search numerous times for their chosen novels like this statistical parametric mapping the analysis of functional brain images, but end up in malicious downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they cope with some infectious bugs inside their desktop computer.

A Review of Scientific Instruments

Abstract: Journal of Scientific Instruments Editor: Dr H R Lang Vol 28 and Supplement No 1, 1951 Pp xvi + 388 + iii + 80 (London: Institute of Physics, 1951) Bound, £3 12s; unbound, £3

A Survey on Mobile Anchor Node Assisted Localization in Wireless Sensor Networks

Abstract: Localization is one of the key technologies in wireless sensor networks (WSNs), since it provides fundamental support for many location-aware protocols and applications. Constraints on cost and power consumption make it infeasible to equip each sensor node in the network with a global position system (GPS) unit, especially for large-scale WSNs. A promising method to localize unknown nodes is to use mobile anchor nodes (MANs), which are equipped with GPS units moving among unknown nodes and periodically broadcasting their current locations to help nearby unknown nodes with localization. A considerable body of research has addressed the mobile anchor node assisted localization (MANAL) problem. However, to the best of our knowledge, no updated surveys on MAAL reflecting recent advances in the field have been presented in the past few years. This survey presents a review of the most successful MANAL algorithms, focusing on the achievements made in the past decade, and aims to become a starting point for researchers who are initiating their endeavors in MANAL research field. In addition, we seek to present a comprehensive review of the recent breakthroughs in the field, providing links to the most interesting and successful advances in this research field.

Single-photon generation and detection

Abstract: The detection and generation of single photons has seen an upsurge in interest in recent years as new scientific fields of research, for example quantum information processing, have been established. This review serves to provide an overview of progress in these areas, describing some of the main candidates for single-photon components for use in emerging fields of research.

Progress in Silicon Single-Photon Avalanche Diodes

Abstract: Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single-photon counting (TCSPC) over the visible spectral range up to 1-mum wavelength. SPADs implemented in planar technology compatible with CMOS circuits offer typical advantages of microelectronic devices (small size, ruggedness, low voltage, low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as do PMTs, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they also attain remarkable performance at high counting rate, and offer picosecond timing resolution with microchannel plate models. In order to make SPAD detectors more competitive in a broader range of SPC and TCSPC applications, it is necessary to face several issues in the semiconductor device design and technology. Such issues will be discussed in the context of the two possible approaches to such a challenge: employing a standard industrial high-voltage CMOS technology or developing a dedicated CMOS-compatible technology. Advances recently attained in the development of SPAD detectors will be outlined and discussed with reference to both single-element detectors and integrated detector arrays.