M
Mathieu Fenoll
Researcher at Georgia Institute of Technology
Publications - 4
Citations - 2023
Mathieu Fenoll is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Organic semiconductor & Electron mobility. The author has an hindex of 4, co-authored 4 publications receiving 1800 citations. Previous affiliations of Mathieu Fenoll include Solvay.
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Journal ArticleDOI
A Universal Method to Produce Low―Work Function Electrodes for Organic Electronics
Yinhua Zhou,Canek Fuentes-Hernandez,Jae Won Shim,Jens Meyer,Anthony J. Giordano,Hong Li,Paul Winget,Theodoros A. Papadopoulos,Hyeunseok Cheun,Jungbae Kim,Mathieu Fenoll,Mathieu Fenoll,Amir Dindar,Wojciech Haske,Ehsan Najafabadi,Talha M. Khan,Hossein Sojoudi,Stephen Barlow,Samuel Graham,Jean-Luc Brédas,Seth R. Marder,Antoine Kahn,Bernard Kippelen +22 more
TL;DR: It is shown that surface modifiers based on polymers containing simple aliphatic amine groups substantially reduce the work function of conductors including metals, transparent conductive metal oxides, conducting polymers, and graphene.
Journal ArticleDOI
Stable solution-processed molecular n-channel organic field-effect transistors.
Do Kyung Hwang,Raghunath R. Dasari,Mathieu Fenoll,Valérie Alain-Rizzo,Amir Dindar,Jae Won Shim,Nabankur Deb,Canek Fuentes-Hernandez,Stephen Barlow,David G. Bucknall,Pierre Audebert,Seth R. Marder,Bernard Kippelen +12 more
TL;DR: A new solution-processable small-molecule containing electron-poor naphthalene diimide and tetrazine moieties has been synthesized and optimized spin-coated n-channel OFETs on glass substrate shows electron mobility value up to 0.15 cm(2) V(-1) s(-1).
Journal ArticleDOI
Systematic reliability study of top-gate p- and n-channel organic field-effect transistors.
Do Kyung Hwang,Canek Fuentes-Hernandez,Mathieu Fenoll,Mathieu Fenoll,Minseong Yun,Jihoon Park,Jae Won Shim,Keith A. Knauer,Amir Dindar,Hyungchul Kim,Yongjin Kim,Jungbae Kim,Hyeunseok Cheun,Marcia M. Payne,Samuel Graham,Seongil Im,John E. Anthony,Bernard Kippelen +17 more
TL;DR: Top-gate OFETs display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media, as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
Journal ArticleDOI
Roles of thermally-induced vertical phase segregation and crystallization on the photovoltaic performance of bulk heterojunction inverted polymer solar cells
Hyeunseok Cheun,John D. Berrigan,Yinhua Zhou,Mathieu Fenoll,Jae Won Shim,Canek Fuentes-Hernandez,Kenneth H. Sandhage,Bernard Kippelen +7 more
TL;DR: In this paper, the photoactive layer, comprised of a mixture of P3HT and PCBM deposited on ZnO, was annealed for 10-30 min at 160 °C.