Showing papers by "Matthew Abernathy published in 2019"
Patent•
19 Sep 2019TL;DR: In this paper, a substrate is placed into a chamber containing an Al target to be sputtered, and the shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.
Abstract: A method for producing a sputtered stochiometric a-Al2O3 thin film. A substrate is placed into a chamber containing an Al target to be sputtered. The chamber is evacuated to a base pressure of about 7 x 10-8 Torr or lower and the temperature of the substrate is maintained. With a sputtering shutter in the chamber closed, Ar gas is flowed into the chamber to backsputter the Al target and Ar and O2 gases are flowed into the chamber to presputter the target. The shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.