Matthias Voelskow

Bio: Matthias Voelskow is an academic researcher from Helmholtz-Zentrum Dresden-Rossendorf. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 11, co-authored 56 publications receiving 559 citations.

Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

Abstract: In this paper we report on recent results obtained from flash lamp annealing (FLA) for the formation of ultra-shallow junctions. Si(1 0 0) wafers were implanted at ultra-low energy (500 eV) with boron to a fluence of 10 15 ions/cm 2 . FLA was carried out at temperatures of 1100 and 1200 °C with a soak time of 20 ms. For comparison conventional rapid thermal annealing (RTA) was performed at 1100 and 1200 °C. The boron diffusion and the dopant activation were investigated by secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP). The activated doses after FLA were as high as 20% of the implanted dose and confined in a layer of 60 nm. The sheet resistances were comparable to those after RTA treatment.

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

Abstract: A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Abstract: The capabilities of plasma doping (PLAD) and flash lamp annealing (FLA) for use in ultra-shallow junction (USJ) fabrication have been evaluated. Silicon wafers have been doped in a BF 3 plasma using wafer biases ranging from 0.6 to 1 kV and a dose of 4 × 10 15 cm −2 . The wafers so implanted have been heat-treated by FLA using pre-heating temperatures in the range of 500–700 °C, peak temperatures of 1100–1350 °C, and effective anneal times of 20 and 3 ms. Secondary ion mass spectrometry (SIMS) and sheet resistance measurements have been undertaken to determine the junction depth and the sheet resistance, respectively. Optimum processing conditions have been identified under which both high electrical activation and insignificant dopant diffusion occur compared to the as-implanted state. In this way, one can obtain combinations of junction depth and sheet resistance that meet the 45 nm technology node requirements.

Radiation damage and annealing behaviour of Ge+-implanted SiC

Abstract: In recent years, single-crystal SiC has become an important electronic material due to its excellent physical and chemical properties The present paper reports a study of the defect reduction and recrysallisation during annealing of Ge+-implanted 6H-SiC Implants have been performed at 200 keV with doses of 1 × 1014 and 1 × 1015 cm−2 Furnace annealing has been carried out at temperatures of 500, 950 and 1500°C Three analytical techniques including Rutherford backscattering spectrometry in conjunction with channelling (RBS/C), positron annihilation spectroscopy (PAS) and cross-sectional transmission electron microscopy (XTEM) have been employed for sample characterisation It has been shown that damage removal is more complicated than in ion-implanted Si The recrystallisation of amorphised SiC layers has been found to be unsatisfactory for temperatures up to 1500°C The use of ion-beam-induced epitaxial crystallisation (IBIEC) has been more successful as lattice regrowth, although still imperfect, has been observed to occur at a temperature as low as 500°C

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Abstract: Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures

Intense pulsed light sintering of copper nanoink for printed electronics

Abstract: An intense pulsed light (IPL) from a xenon flash lamp was used to sinter copper nanoink printed on low-temperature polymer substrates at room temperature in ambient condition. The IPL can sinter the copper nanoink without damaging the polymer substrates in extremely short time (2 ms). The microstructure of the sintered copper film was investigated using X-ray powder diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), X-ray micro tomography, and atomic force microscopy (AFM). The sintered copper film has a grainy structure with neck-like junctions. The resulting resistivity was 5 μΩ cm of electrical resistivity which is only 3 times as high as that of bulk copper. The IPL sintering technique allows copper nanoparticles to be used in inkjet printing on low-temperature substrates such as polymers in ambient conditions.

Ion-beam induced damage and annealing behaviour in SiC

Abstract: The paper presents the damage accumulation in silicon carbide (SiC) as a function of the ion mass, the ion energy and the implantation temperature. A defect-interaction and amorphization model is used to analyse the dose dependence of defect production, as obtained by the various methods. The temperature dependence of the amorphization dose can be represented assuming a thermally enhanced annealing within the primary collision cascades. On the basis of such a model, a critical implantation temperature is obtained, which was found to vary with the ion mass and the implantation energy. The concurrent influence of implantation temperature and ion fluence on the resulting damage distribution in SiC is demonstrated. The damage annealing of ion implanted SiC is investigated for low, medium and high damage concentrations. The effect of the implantation temperature and the concentration of implanted atoms, both influencing the kind of defects obtained after implantation, on the annealing behaviour is analysed.

Structure and properties of ion-beam-modified (6H) silicon carbide

Abstract: The ion-beam-induced crystalline-to-amorphous phase transition in single crystal ( 6 H) α -SiC has been studied as a function of irradiation temperature. The evolution of the amorphous state has been followed in situ by transmission electron microscopy in specimens irradiated with 0.8 MeV Ne + , 1.0 MeV Ar + , and 1.5 MeV Xe + ions over the temperature range from 20 to 475 K. The threshold displacement dose for complete amorphization in α -SiC at 20 K is 0.30 dpa (damage energy=15 eV atom −1 ). The dose for complete amorphization increases with temperature due to simultaneous recovery processes that can be adequately modeled in terms of a single-activated process. The critical temperature, above which amorphization does not occur, increases with particle mass and saturates at about 500 K. Single crystals of α -SiC with [0001] orientation have also been irradiated at 300 K with 360 keV Ar 2+ ions at an incident angle of 25° over fluences ranging from 1 to 8 Ar 2+ ions nm −2 . The damage accumulation in these samples has been characterized ex situ by Rutherford backscattering spectrometry–channeling (RBS/C) along the [0001] direction, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), and mechanical microprobe measurements.

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Abstract: Raman spectroscopy was used to investigate the structure of ion-irradiated α-SiC single crystals at room temperature and 400 °C. Irradiations induce a decrease of the Raman line intensities related to crystalline SiC, the appearance of several new Si–C vibration bands attributed to the breakdown of the Raman selection rules, and the formation of homonuclear bonds Si–Si and C–C within the SiC network. For low doses, the overall sp3 bond structure and the chemical order may be almost completely conserved. By contrast, the amorphous state shows a strong randomization of the Si–Si, Si–C and C–C bonds. The relative Raman intensity decreases exponentially versus increasing dose due to the absorption of the irradiated layer. The total disorder follows a sigmoidal curve, which is well fitted by the direct impact/defect stimulated model. The chemical disorder expressed as the ratio of C–C bonds to Si–C bonds increases exponentially versus the dose. A clear correlation is established between the total disorder and the chemical disorder. The increase of temperature allows the stabilization of a disordered/distorted state and a limitation of damage accumulation owing to the enhancement of the dynamic annealing.