There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

1. Introduction 2. Theoretical foundations 3. Propagation and focusing of optical fields 4. Spatial resolution and position accuracy 5. Nanoscale optical microscopy 6. Near-field optical probes 7. Probe-sample distance control 8. Light emission and optical interaction in nanoscale environments 9. Quantum emitters 10. Dipole emission near planar interfaces 11. Photonic crystals and resonators 12. Surface plasmons 13. Forces in confined fields 14. Fluctuation-induced phenomena 15. Theoretical methods in nano-optics Appendices Index.

/pdf/principles-of-nano-optics-1hz998yqo8.pdf

Principles of nano-optics

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

Phase-change materials for rewriteable data storage

The identification of materials suitable for non-volatile phase-change memory applications is driven by the need to find materials with tailored properties for different technological applications and the desire to understand the scientific basis for their unique properties. Here, we report the observation of a distinctive and characteristic feature of phase-change materials. Measurements of the dielectric function in the energy range from 0.025 to 3 eV reveal that the optical dielectric constant is 70-200% larger for the crystalline than the amorphous phases. This difference is attributed to a significant change in bonding between the two phases. The optical dielectric constant of the amorphous phases is that expected of a covalent semiconductor, whereas that of the crystalline phases is strongly enhanced by resonant bonding effects. The quantification of these is enabled by measurements of the electronic polarizability. As this bonding in the crystalline state is a unique fingerprint for phase-change materials, a simple scheme to identify and characterize potential phase-change materials emerges.

Resonant bonding in crystalline phase-change materials

Materials whose optical properties can be reconfigured are crucial for photonic applications such as optical memories. Phase-change materials offer such utility and here recent progress is reviewed. Phase-change materials (PCMs) provide a unique combination of properties. On transformation from the amorphous to crystalline state, their optical properties change drastically. Short optical or electrical pulses can be utilized to switch between these states, making PCMs attractive for photonic applications. We review recent developments in PCMs and evaluate the potential for all-photonic memories. Towards this goal, the progress and existing challenges to realize waveguides with stepwise adjustable transmission are presented. Colour-rendering and nanopixel displays form another interesting application. Finally, nanophotonic applications based on plasmonic nanostructures are introduced. They provide reconfigurable, non-volatile functionality enabling manipulation and control of light. Requirements and perspectives to successfully implement PCMs in emerging areas of photonics are discussed.

/pdf/phase-change-materials-for-non-volatile-photonic-1cf9ik6vwm.pdf

Phase-change materials for non-volatile photonic applications

Temperature dependent measurements of the electrical resistance have been employed to study structural changes in sputtered Ge2Sb2Te5 films. The pronounced changes of film resistance due to structural changes enable a precise determination of transition temperatures and activation energies. Furthermore the technique is sensitive enough to measure the influence of ultrathin capping layers on the transformation kinetics. With increasing temperature the Ge2Sb2Te5 films undergo a structural change from an amorphous to rock salt structure (Fm3m) around 140 °C and finally a hexagonal structure (p3m) around 310 °C. Both structural changes are accompanied by a major drop of resistance. Applying the Kissinger method [Anal. Chem. 29, 1702 (1957)] the activation energy for crystallization to the rock salt structure is determined to be 2.24±0.11 eV, and for the phase transformation to the hexagonal phase to be 3.64±0.19 eV, respectively. A thin capping layer of ZnS–SiO2 leads to an increase of the first transition temperature as well as of the corresponding activation energy (2.7±0.2 eV).

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

Phase-change materials are widely used as non-volatile memories, for example in optical data storage, but the search for improved phase-change materials has proved difficult. Based on a fundamental understanding of their bonding characteristics, a systematic prediction of phase-change properties has now become possible.

Matthias Wuttig

Papers

Phase-change materials for rewriteable data storage

Resonant bonding in crystalline phase-change materials

Phase-change materials for non-volatile photonic applications

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

A map for phase-change materials.