Maurizio Passacantando

TL;DR: In this article, the surface chemistry of L-CVD SnO2 thin films on Si(100) before and after subsequent additional oxidation was studied. And the ageing effect was also checked in order to check the influence of ambient oxidation.

TL;DR: In this article, the surface stoichiometry of SiO x thin films (x = 1-2) has been studied by means of X-ray photoelectron spectroscopy, and the presence of three Si oxidation states (SiO 2, SiO, Si 2 O 3 ) has been observed through an analysis of the Si2p line shape and the intensity variation of these different silicon oxide signals, as a function of the oxygen content.

TL;DR: In this paper, the gas sensitivity, selectivity and stability properties of WO 3 thin films for the detection of NO 2 gas in the concentration range 0.2 -5 ppm, have been evaluated and discussed in the light of the preparation conditions and working temperature.

TL;DR: In this article, a comparison of sol-gel prepared TiO2, WO3, and MoO3 single metal oxide based gas sensors was conducted Sensors based on binary compound MoO 3-TiO2 and Mo O 3-WO3 were also compared where the performance is superior to their single oxide constituents.

TL;DR: In this article, WO3 thin films have been deposited on alumina substrates provided with platinum interdigital electrodes by sol-gel (SG), r.f. sputtering (RFS), and vacuum thermal evaporation (VTE) techniques and annealed at temperatures between 500°C and 600°C for 1 to 30 h in static air.