M
Mauro Murgia
Researcher at Istituto Italiano di Tecnologia
Publications - 68
Citations - 4325
Mauro Murgia is an academic researcher from Istituto Italiano di Tecnologia. The author has contributed to research in topics: Thin film & Pentacene. The author has an hindex of 30, co-authored 61 publications receiving 3994 citations. Previous affiliations of Mauro Murgia include University of Bologna & National Research Council.
Papers
More filters
Journal ArticleDOI
Room temperature spin polarized injection in organic semiconductor
TL;DR: In this article, the first experimental evidence of room temperature direct spin polarized injection in sexithienyl (T 6 ), a prototypical organic semiconductor, from colossal magnetoresistance manganite La 0.7 Sr 0.3 MnO 3 (LSMO), was reported.
Journal ArticleDOI
Spatially correlated charge transport in organic thin film transistors
Franco Dinelli,Mauro Murgia,Pablo Levy,Massimiliano Cavallini,Fabio Biscarini,Dago M. de Leeuw +5 more
TL;DR: In this paper, the authors studied the charge carrier mobility in organic ultrathin film field effect transistors as a function of the coverage and showed that the second layer is crucial, as it provides efficient percolation pathways for carriers generated in both the first and second layers.
Journal ArticleDOI
Ambipolar light-emitting organic field-effect transistor
Constance Rost,Siegfried Karg,Walter Riess,Maria Antonietta Loi,Mauro Murgia,Michele Muccini +5 more
TL;DR: In this article, a light-emitting organic field effect transistor (OFET) with pronounced ambipolar current characteristics is demonstrated, where the light intensity is controlled by both the drain-source voltage VDS and the gate voltage VG.
Journal ArticleDOI
High‐Mobility Ambipolar Transport in Organic Light‐Emitting Transistors
Franco Dinelli,Raffaella Capelli,Maria Antonietta Loi,Mauro Murgia,Michele Muccini,Antonio Facchetti,Tobin J. Marks +6 more
TL;DR: In this article, a two-component layered structure of organic light-emitting transistors (OLETs) with balanced ambipolar transport and mobility as large as 3 × 10 cm V s is presented.
Journal ArticleDOI
Bias-induced threshold voltages shifts in thin-film organic transistors
Henrique L. Gomes,Peter Stallinga,Franco Dinelli,Mauro Murgia,Fabio Biscarini,Dago M. de Leeuw,T. Muck,J. Geurts,Laurens W. Molenkamp,Veit Wagner +9 more
TL;DR: In this article, the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is investigated and the kinetics of the threshold voltage shift upon application of a gate bias has been determined.