Mehmet Arik

Bio: Mehmet Arik is an academic researcher from Özyeğin University. The author has contributed to research in topics: Heat transfer & Synthetic jet. The author has an hindex of 30, co-authored 191 publications receiving 4002 citations. Previous affiliations of Mehmet Arik include General Electric & University of Maryland, College Park.

Led power package

Abstract: Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub­mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.

Led light with active cooling

Abstract: An LED lamp that includes a piezoelectric fan or synthetic jet to cool component of the lamp is disclosed.

Thermal management of LEDs: package to system

Abstract: Light emitting diodes, LEDs, historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. The increased electrical currents used to drive the LEDs have focused more attention on the thermal paths in the developments of LED power packaging. The luminous efficiency of LEDs is soon expected to reach over 80 lumens/W, this is approximately 6 times the efficiency of a conventional incandescent tungsten bulb. Thermal management for the solid-state lighting applications is a key design parameter for both package and system level. Package and system level thermal management is discussed in separate sections. Effect of chip packages on junction to board thermal resistance was compared for both SiC and Sapphire chips. The higher thermal conductivity of the SiC chip provided about 2 times better thermal performance than the latter, while the under-filled Sapphire chip package can only catch the SiC chip performance. Later, system level thermal management was studied based on established numerical models for a conceptual solid-state lighting system. A conceptual LED illumination system was chosen and CFD models were created to determine the availability and limitations of passive air-cooling.

Direct Liquid Cooling of High Flux Micro and Nano Electronic Components

Abstract: The inexorable rise in chip power dissipation and emergence of on-chip hot spots with heat fluxes approaching 1 =kW/cm2 has turned renewed attention to direct cooling with dielectric liquids. Use of dielectric liquids in intimate contact with the heat dissipating surfaces eliminates the deleterious effects of solid-solid interface resistances and harnesses the highly efficient phase-change processes to the critical thermal management of advanced IC chips. In the interest of defining the state-of-the-art in direct liquid cooling, this paper begins with a discussion of the thermophysics of phase-change processes and a description of the available dielectric liquid cooling techniques and their history. It then describes the phenomenology of pool boiling, spray/jet impingement, gas-assisted evaporation, and synthetic jet impingement with dielectric liquids. Available correlations for predicting the heat transfer coefficients and limiting heat transfer rates, as well as documented empirical results for these promising techniques for on-chip hot spot cooling, are also provided and compared

Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking

Abstract: A semiconductor device die (10, 116) is disposed on a heat-sinking support structure (30, 100). Nanotube regions (52, 120) contain nanotubes (54, 126) are arranged on a surface of or in the heatsinking support structure (30, 100). The nanotube regions (52, 120) are arranged to contribute to heat transfer from the semiconductor device die (10, 116) to the heat-sinking support structure (30, 100). In one embodiment, the semiconductor device die (10) includes die electrodes (20, 22), and the support structure (30) includes contact pads (40, 42) defined by at least some of the nanotube regions (52). The contact pads (40, 42) electrically and mechanically contact the die electrodes (20, 22). In another embodiment, the heat-sinking support structure (100) includes microchannels (120) arranged laterally in the support structure (100). At least some of the nanotube regions are disposed inside the microchannels (100).

Light-emitting diodes

Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Cantilever transducers as a platform for chemical and biological sensors

Abstract: Since the late 1980s there have been spectacular developments in micromechanical or microelectro-mechanical (MEMS) systems which have enabled the exploration of transduction modes that involve mechanical energy and are based primarily on mechanical phenomena. As a result an innovative family of chemical and biological sensors has emerged. In this article, we discuss sensors with transducers in a form of cantilevers. While MEMS represents a diverse family of designs, devices with simple cantilever configurations are especially attractive as transducers for chemical and biological sensors. The review deals with four important aspects of cantilever transducers: (i) operation principles and models; (ii) microfabrication; (iii) figures of merit; and (iv) applications of cantilever sensors. We also provide a brief analysis of historical predecessors of the modern cantilever sensors.