Melissa Panlasigui

Bio: Melissa Panlasigui is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Graphene & Quantum tunnelling. The author has an hindex of 3, co-authored 3 publications receiving 1734 citations.

Strain-Induced Pseudo–Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles

Abstract: Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."

Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene

Abstract: Scanning tunnelling spectra of a graphene field-effect transistor reveal an unexpected tenfold increase in conductance as a result of phonon-mediated inelastic tunnelling. The honeycomb lattice of graphene is a unique two-dimensional system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions1,2. Novel nanometre-scale behaviour in this material, including electronic scattering3,4, spin-based phenomena5 and collective excitations6, is predicted to be sensitive to charge-carrier density. To probe local, carrier-density-dependent properties in graphene, we have carried out atomically resolved scanning tunnelling spectroscopy measurements on mechanically cleaved graphene flake devices equipped with tunable back-gate electrodes. We observe an unexpected gap-like feature in the graphene tunnelling spectrum that remains pinned to the Fermi level (EF) regardless of graphene electron density. This gap is found to arise from a suppression of electronic tunnelling to graphene states near EF and a simultaneous giant enhancement of electronic tunnelling at higher energies due to a phonon-mediated inelastic channel. Phonons thus act as a ‘floodgate’ that controls the flow of tunnelling electrons in graphene. This work reveals important new tunnelling processes in gate-tunable graphitic layers.

Observation of carrier-density-dependent many-body effects in graphene via tunneling spectroscopy.

Abstract: We find the scanning tunneling spectra of backgated graphene monolayers to be significantly altered by many-body excitations. Experimental features in the spectra arising from electron-plasmon interactions show carrier density dependence, distinguishing them from density-independent electron-phonon features. Using a straightforward model, we are able to calculate theoretical tunneling spectra that agree well with our data, providing insight into the effects of many-body interactions on the lifetime of graphene quasiparticles.

Electronic transport in two-dimensional graphene

Abstract: We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

Graphene plasmonics for tunable terahertz metamaterials

Abstract: Plasmons describe collective oscillations of electrons. They have a fundamental role in the dynamic responses of electron systems and form the basis of research into optical metamaterials 1–3 . Plasmons of two-dimensional massless electrons, as present in graphene, show unusual behaviour 4–7 that enables new tunable plasmonic metamaterials 8–10 and, potentially, optoelectronic applications in the terahertz frequency range 8,9,11,12 .H ere we explore plasmon excitations in engineered graphene microribbon arrays. We demonstrate that graphene plasmon resonances can be tuned over a broad terahertz frequency range by changing micro-ribbon width and in situ electrostatic doping. The ribbon width and carrier doping dependences of graphene plasmon frequency demonstrate power-law behaviour characteristic of two-dimensional massless Dirac electrons 4–6 . The plasmon resonances have remarkably large oscillator strengths, resulting

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Abstract: We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Graphene plasmonics

Abstract: Two rich and vibrant fields of investigation, graphene physics and plasmonics, strongly overlap Not only does graphene possess intrinsic plasmons that are tunable and adjustable, but a combination of graphene with noble-metal nanostructures promises a variety of exciting applications for conventional plasmonics The versatility of graphene means that graphene-based plasmonics may enable the manufacture of novel optical devices working in different frequency ranges, from terahertz to the visible, with extremely high speed, low driving voltage, low power consumption and compact sizes Here we review the field emerging at the intersection of graphene physics and plasmonics

Tunnel field-effect transistors as energy-efficient electronic switches

Abstract: Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.