Michael Clavel

TL;DR: Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

TL;DR: A novel lead-free ferroelectric thin film integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications is introduced and a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology is opened up.

TL;DR: The synthesized erbium-doped ceria nanoparticles can emit visible light when excited with either UV or IR photons and opens new opportunities for applications where emission of light via both up- and down-conversions from a single nanomaterial is desired such as solar cells and bio-imaging.

TL;DR: The structural, morphological, and energy band alignment properties of biaxial tensile-strained germanium epilayers, grown in-situ on GaAs via a linearly graded InxGa1−xAs buffer architecture and utilizing dual chamber molecular beam epitaxy, were investigated in this article.

TL;DR: The heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization is reported on.