Michael Dydyk

Bio: Michael Dydyk is an academic researcher from Motorola. The author has contributed to research in topics: Power dividers and directional couplers & Image impedance. The author has an hindex of 16, co-authored 54 publications receiving 1041 citations.

Coplanar waveguides and microwave inductors on silicon substrates

Abstract: Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The aim of this paper is to evaluate the potential of using high-resistivity silicon as a low-cost low-loss microwave substrate through an experimental comparative study. Coplanar waveguides fabricated on Si, GaAs, and quartz substrates are tested and their characteristics are compared. Microwave spiral inductors and meander lines are also fabricated on various substrates, and their performance is also analyzed. The results demonstrate that the losses of a coplanar transmission line (CPW) realized on high-resistivity (3 k to 7 k /spl Omega/-cm) silicon substrates are comparable to the losses of a CPW realized on a GaAs substrate covered with insulators. Furthermore, measured unloaded Q's of microwave inductive structures on high-resistivity silicon substrates are comparable to the measured unloaded Q's of the same structures on GaAs and on quartz. This paper demonstrates that high-resistivity Si can be used as a microwave substrate. >

Microstrip directional couplers with ideal performance via single-element compensation

Abstract: Microstrip directional couplers suffer from poor directivity because of inhomogeneous dielectric, i.e., partly dielectric substrate, partly air. It is possible to compensate for this poor performance by introducing a single lumped capacitor or inductor at the edges or center of the coupled region. No attempt at a theoretical design of these couplers has been made in the literature. This paper fills the void by presenting an accurate approach to the design of microstrip directional couplers with ideal match or high directivity of both, using a single capacitive of inductive compensation. The method is valid for tight and loosely coupled structures. The method is validated via design and experimental results.

Accurate design of microstrip directional couplers with capacitive compensation

Abstract: An accurate design is presented for microstrip directional couplers with high directivity using capacitive compensation. The method utilizes symmetry analysis and equivalency principals to develop closed-form solutions of the compensating capacitance and a new odd mode characteristics impedance necessary to realize an ideal microstrip directional coupler. The design approach is valid for any degree of coupling, thereby overcoming limitations of previous approaches to this design concept. >

Silicon as a microwave substrate

Abstract: Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The lower resistivity of Si (/spl ap/10 k /spl Omega/-cm) compared to GaAs (/spl ap/10 M /spl Omega/-cm) is perceived as a major disadvantage. In this paper, we present measured and simulated results demonstrating that the losses of a coplanar transmission line (CPW) realized on silicon substrates are comparable to the losses of a CPW realized on a GaAs substrate with insulators. The loss mechanisms of Si and GaAs substrates used for microwave applications are analyzed using both microwave and semiconductor physics theory. A high resistivity Si substrate can be used both as a microwave substrate and an active element carrier permitting further integration at low cost. >

Temperature compensated resonator and method

Abstract: A temperature compensated resonator (15) and method for making the temperature compensated resonator (15) The temperature compensated resonator (15) has a substrate (110) including a cavity (120, 160) and a resonator layer (150) A bonding medium (159, 160) couples the substrate (110) to the resonator layer (150) The resonator layer (150) is bonded atop the cavity (120, 160) A conductor (215) is included on the resonator layer (150) The conductor (215) heats the resonator layer (150) in response to a current passing through the conductor (215)

Lumped Elements for RF and Microwave Circuits

Abstract: Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in exceptional detail. No other single volume treats this subject matter in such depth. From materials, fabrication, and analyses - to design, modeling, and physical, electrical, and thermal applications, this unique resource offers you complete coverage of the critical topics you need understand for your work in the field. Offering the most comprehensive, up-to-date body of knowledge on lumped elements, the book is an indispensable professional reference and serves as an excellent text for senior undergraduate and graduate-level courses in RF and microwave circuit design.

Millimeter-Wave Power-Combining Techniques

Abstract: This paper summarizes different power-combining techniques and their performance, with particular emphasis on millimeter-wave developments. The tradeoffs of these techniques are discussed and future trends predicted.

RF MEMS and their applications

Abstract: Preface. Microelectromechanical Systems (MEMS) and Radio Frequency MEMS. MEMS Materials and Fabrication Techniques. RF MEMS Switches and Micro Relays. MEMS Inductors and Capacitors. Micromachined RF Filters. Micromachined Phase Shifters. Micromachined Transmission Lines and Components. Micromachined Antennae. Integration and Packaging for RF MEMS Devices. Index.

Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits

Abstract: This paper introduces floating shields for on-chip transmission lines, inductors, and transformers implemented in production silicon CMOS or BiCMOS technologies. The shield minimizes losses without requiring an explicit on-chip ground connection. Experimental measurements demonstrate Q-factor ranging from 25 to 35 between 15 and 40 GHz for shielded coplanar waveguide fabricated on 10 /spl Omega//spl middot/cm silicon. This is more than a factor of 2 improvement over conventional on-chip transmission lines (e.g., microstrip, CPW). A floating-shielded, differentially driven 7.4-nH inductor demonstrates a peak Q of 32, which is 35% higher than an unshielded example. Similar results are realizable for on-chip transformers. Floating-shielded bond-pads with 15% less parasitic capacitance and over 60% higher shunt equivalent resistance compared to conventional shielded bondpads are also described. Implementation of floating shields is compatible with current and projected design constraints for production deep-submicron silicon technologies without process modifications. Application examples of floating-shielded passives implemented in a 0.18-/spl mu/m SiGe-BiCMOS are presented, including a 21-26-GHz power amplifier with 23-dBm output at 20% PAE (at 22 GHz), and a 17-GHz WLAN image-reject receiver MMIC which dissipates less than 65 mW from a 2-V supply.

On the design of RF spiral inductors on silicon

Abstract: This review of design principles for implementation of a spiral inductor in a silicon integrated circuit fabrication process summarizes prior art in this field. In addition, a fast and physics-based inductor model is exploited to put the results contributed by many different groups in various technologies and achieved over the past eight years into perspective. Inductors are compared not only by their maximum quality factors (Q/sub max/), but also by taking the frequency at Q/sub max/, the inductance value (L), the self-resonance frequency (f/sub SR/), and the coil area into account. It is further explained that the spiral coil structure on a lossy silicon substrate can operate in three different modes, depending at first order on the silicon doping concentration. Ranging from high to low substrate resistivity, inductor-mode, resonator-mode, and eddy-current regimes are defined by characteristic changes of Q/sub max/, L, and f/sub SR/. The advantages and disadvantages of patterned or blanket resistive ground shields between the inductor coil and substrate and the effect of a substrate contact on the inductor are also addressed in this paper. Exploring optimum inductor designs under various constraints leverages the speed of the model. Finally, in view of the continuously increasing operating frequencies in advancing to new generations of RF systems, the range of feasible inductance values for given quality factors are predicted on the basis of optimum technological features.