Michael James Paisley

TL;DR: In this article, the authors proposed a procedure to reduce the density of Vf drift inducing BPDs in epilayers of bipolar SiC devices by reducing the number of Shockley Stacking Faults (SFs).

TL;DR: In this paper, a method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer.

TL;DR: In this paper, transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers, which consists of two intersecting planar faults on prismatic and basal planes.

TL;DR: A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature.

TL;DR: Basal plane dislocations (BPDs) are an important category of extended defects in SiC epilayers They act as nucleation sites for single layer Shockley-type stacking faults which account for the degradation of the bipolar devices operating under forward bias.