Michael L. Roukes

Bio: Michael L. Roukes is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Nanoelectromechanical systems & Resonator. The author has an hindex of 78, co-authored 284 publications receiving 34729 citations. Previous affiliations of Michael L. Roukes include Los Alamos National Laboratory & University of Utah.

Spintronics: a spin-based electronics vision for the future.

Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications.

Abstract: Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications

Zeptogram-Scale Nanomechanical Mass Sensing

Abstract: Very high frequency (VHF) nanoelectromechanical systems (NEMS) provide unprecedented sensitivity for inertial mass sensing. We demonstrate in situ measurements in real time with mass noise floor ∼20 zg. Our best mass resolution corresponds to ∼7 zg, equivalent to ∼30 xenon atoms or the mass of an individual 4 kDa molecule. Detailed analysis of the ultimate sensitivity of such devices based on these experimental results indicates that NEMS can ultimately provide inertial mass sensing of individual intact, electrically neutral macromolecules with single-Dalton (1 amu) resolution.

Thermoelastic damping in micro- and nanomechanical systems

Abstract: The importance of thermoelastic damping as a fundamental dissipation mechanism for small-scale mechanical resonators is evaluated in light of recent efforts to design high-Q micrometer- and nanometer-scale electromechanical systems. The equations of linear thermoelasticity are used to give a simple derivation for thermoelastic damping of small flexural vibrations in thin beams. It is shown that Zener’s well-known approximation by a Lorentzian with a single thermal relaxation time slightly deviates from the exact expression.

Nanoelectromechanical Systems

Abstract: Nanoelectromechanical systems, or NEMS, are MEMS scaled to submicron dimensions. In this size regime, it is possible to attain extremely high fundamental frequencies while simultaneously preserving very high mechanical responsivity (small force constants). This powerful combination of attributes translates directly into high force sensitivity, operability at ultralow power, and the ability to induce usable nonlinearity with quite modest control forces. In this overview I shall provide an introduction to NEMS and will outline several of their exciting initial applications. However, a stiff entry fee exists at the threshold to this new domain: new engineering is crucial to realizing the full potential of NEMS. Certain mainstays in the methodology of MEMS will, simply, not scale usefully into the regime of NEMS. The most problematic of issues are the size of the devices compared to their embedding circuitry, their extreme surface-to-volume ratios, and their unconventional "characteristic range of operation". These give rise to some of the principal current challenges in developing NEMS. Most prominent among these are the need for: ultrasensitive, very high bandwidth displacement transducers; an unprecedented control of surface quality and adsorbates; novel modes of efficient actuation at the nanoscale, and precise, robust, and routinely reproducible new approaches to surface and bulk nanomachining. I survey each of these aspects in turn, and conclude by describing several of the exciting prospects in this new field.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Abstract: When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality1,2. Indeed, a distinctive half-integer quantum Hall effect has been predicted3,4,5 theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure6,7. Recent advances in micromechanical extraction and fabrication techniques for graphite structures8,9,10,11,12 now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

Abstract: When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality. Indeed, a distinctive half-integer quantum Hall effect has been predicted theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure. Recent advances in micromechanical extraction and fabrication techniques for graphite structures now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

Spintronics: a spin-based electronics vision for the future.

Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

Spintronics: Fundamentals and applications

Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.